![Author ORCID: We display the ORCID iD icon alongside authors names on our website to acknowledge that the ORCiD has been authenticated when entered by the user. To view the users ORCiD record click the icon. [opens in a new tab]](https://www.cambridge.org/engage/assets/public/coe/logo/orcid.png){kind=logo}
Abstract
Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in
electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an
AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,
we present a low temperature atomic layer deposition (ALD) process using
tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting
behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were
crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with
low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew
epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based
electronic devices.
Supplementary materials
Title
Revised Supporting information
Description
Actions
