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Efficient Nonradiative Recombination Centers in MBE-Grown Si and SiGe/Si Heterostructures

Published online by Cambridge University Press:  26 February 2011

W. M. Chen ,
I. A. Buyanova ,
A. Henry ,
W.-X. Ni ,
G. V. Hansson  and
B. Monemar
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN.
I. A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN.
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN.
W.-X. Ni
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN.
G. V. Hansson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN.
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN.
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Abstract

We carry out an investigation of grown-in nonradiative defects in Si and SiGe/Si heterostructures grown by molecular-beam-epitaxy (MBE). A number of such defects are observed by the optical detection of magnetic resonance (ODMR) technique, in samples with various structures and growth conditions. These defects are shown to provide efficient nonradiative shunt paths for carrier recombination, competing with and reducing radiative recombination processes. It is revealed that the dominant nonradiative defect is a low-symmetry vacancy-related complex, evident from a characteristic hyperfine structure due to 29Si ligands (with nuclear spin I=1/2 and natural abundance of 4.67 %) connected to the dangling bonds. The introduction of these defects is believed to be largely due to a low surface adatom mobility during the low temperature growth. By varying the substrate bias during the MBE growth, it is shown that the formation of these nonradiative defects can be effectively enhanced by exposure to accelerated positive ions, presumably dominated by the Si+ ions. Effects of hydrogenation on these defects are also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 135
Copyright
Copyright © Materials Research Society 1995

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