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Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

Published online by Cambridge University Press:  17 March 2011

Won-Jae Lee ,
Chang-Ho Shin ,
In-Kyu You ,
Il-Suk Yang ,
Sang-Ouk Ryu ,
Byoung-Gon Yu ,
Kyoung-Ik Cho ,
Soon-Gil Yoon  and
Chun-Su Lee
Won-Jae Lee
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Chang-Ho Shin
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
In-Kyu You
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Il-Suk Yang
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Sang-Ouk Ryu
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Byoung-Gon Yu
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Kyoung-Ik Cho
Affiliation:
Micro-Electronics Technology Laboratory, ETRI, 161 Kajong-dong, Yusong-gu, Daejon 305-600, Korea
Soon-Gil Yoon
Affiliation:
Department of Materials Engineering, Chungnam National University, Yusong-gu, Daejon, 305-764, Korea
Chun-Su Lee
Affiliation:
Genitech. Co., Ltd., 1694-5, Shinil-dong, Daedug-gu, Daejon, 306-230, Korea
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Abstract

The SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D13.3.1
Copyright
Copyright © Materials Research Society 2001

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