Crossref Citations
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Teyssandier, F.
and
Dollet, A.
1999.
Non-equilibrium Processing of Materials.
Vol. 2,
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Published online by Cambridge University Press: 15 February 2011
Light-scattering was used to monitor the chemical vapor deposition of silicon carbide from methyltrichlorosilane. The nucleation and growth of the SiC features caused changes in the surface topography that altered the angular scattering spectrum that was generated with a He-Ne laser. These scattering spectra were then analyzed to obtain information about the nucleation and growth processes that are occurring.