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Interstitial Defect Reactions In Silicon

Published online by Cambridge University Press:  15 February 2011

S. Zhao ,
A. M. Agarwal ,
J. L. Benton ,
G. H. Gilmer  and
L. C. Kimerling
S. Zhao
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, szhao@photonics.mit.edu
A. M. Agarwal
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, szhao@photonics.mit.edu
J. L. Benton
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
G. H. Gilmer
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974
L. C. Kimerling
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, szhao@photonics.mit.edu
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Abstract

The interaction between self-interstitials (Sii), impurities, and dopants in Si leads the formation of undesirable point defects which affect device operation. Electron beam irradiation has been used to generate Sii and initiate defect reactions, and the hierarchy and competition of interstitial defect reactions involving O, C, B, and P in Si have been explored by DLTS measurements. We describe the interstitial defect reactions as a three-step process: (i) displacement reaction for the generation of Sii, (ii) Watkins replacement reaction for the generation of C and B interstitials (Ci and Bi), and (iii) diffusion limited reaction for the formation of pairs. Within the framework of reaction kinetics, for the first time, we have successfully set up a nonlinear system model to simulate the reaction processes. The interstitial migration enthalpy and the pair formation capture radius are two parameters used in the model to describe long range migration and near neighbor interaction. The good agreement between the model and experiments not only supports the defect assignments by DLTS, but also provides an initial glimpse into the interaction of point defects in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 231
Copyright
Copyright © Materials Research Society 1997

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References

[1] Kimerling, L. C., Asom, M. T., Benton, J. L., Drevinsky, P. J., and Caefer, C. E., Mater. Sci. Forum, 38–41, 141(1989).Google Scholar
[2] Drevinsky, P. J., Caefer, C. E., Kimerling, L. C., and Benton, J. L., in Defect Control in Semiconductors, edited by Sumino, K., (Elsevier Sci. Pub. B. V. North-Holland, 1990) p341 Google Scholar
[3] Asom, M. T., Benton, J. L., Sauer, R., and Kimerling, L. C., Appl. Phys. Lett. 51, 256 (1987).Google Scholar
[4] Drevinsky, P. J., Caefer, C. E., Tobin, S. P., Mikkelsen, J. C., Jr., and Kimerling, L. C., Mat. Res. Soc. Symp. Proc., 104, 167 (1988).Google Scholar
[5] σN = 0.12, Corbett, J. W., in Electron Radiation Damage in Semiconductors and Metals, Solid State Phys. Suppl. 7, (Academic Press, NY 1966), p74 .Google Scholar
[6] Girifalco, L. A., Statistical Physics of Materials (Wiley, NY 1973).Google Scholar
[7] Lannoo, M. and Bourgoin, J., Point Defects in Semiconductors II. Experimental Aspects (Springer-Verlag, Berlin, 1982).Google Scholar
[8] Harris, R. D., Watkins, G. D., and Kimerling, L. C., Mater. Sci. Forum, 10–12, 163 (1986).Google Scholar
[9] Kimerling, L. C., Blood, P., and Gibson, W. M., in Defects and Radiation Effects in Semiconductors 1978, Inst. Phys. Conf. Ser. 46, p273–280 .Google Scholar
[10] Song, L. W. and Watkins, G. D., Phys. Rev. B, 42, 5759 (1990).Google Scholar
[11] Sii is very mobile at low temperatures under irradiation conditions and exhibits much slower diffusion at high temperatures. The Watkins replacement reaction is the fastest process of Hi m (Sii) ≤ 0.40 eV, under irradiation conditions.Google Scholar
[12] Davies, G., Mater. Sci. Forum, 38–41, 151 (1989).Google Scholar