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Liquid-Phase Deposition of Low-K Organic Silicon-Oxide Films

Published online by Cambridge University Press:  10 February 2011

K. Usami ,
S. Sugahara ,
K. Sumimura  and
M. Matsumura
K. Usami
Affiliation:
Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550, Japan
S. Sugahara
Affiliation:
Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550, Japan
K. Sumimura
Affiliation:
Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550, Japan
M. Matsumura
Affiliation:
Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8550, Japan
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Abstract

Low-K silica films were grown from the liquid phase using methyl-triethoxy-silane. Physical and chemical properties were investigated together with electronic properties. The film had dense methyl groups and showed insulating characteristics even under as-grown conditions. The dielectric constant, low-field resistivity and breakdown field-strength were 3.6, 1013 Ωcm and IMV/cm, respectively, for the as-grown film. They were improved to 2.6, more than 1015 Ωcm and more than 3MV/cm, respectively, after 300°C vacuum annealing

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 27
Copyright
Copyright © Materials Research Society 1998

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References

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