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Mechanical Behavior of Indium Oxide Thin Films on Polymer Substrates

Published online by Cambridge University Press:  10 February 2011

D. R. Cairns
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
S. M. Sachsman
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
D. K. Sparacin
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
R. P. Witte II
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
G. P. Crawford
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
D. C. Paine
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
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Abstract

We report on the change in electrical resistance of tin doped indium oxide thin films on polymer substrates with increasing uniaxial strain. The resistance increases rapidly but continuously above a threshold strain. The threshold strain at which the resistance increases is correlated to the onset of cracking in the oxide film. The strain for cracking and increase in resistance depend upon film thickness. We have measured the distance between neighboring ITO cracks as a function of strain in situ using an optical microscope. At high uniaxial strains the ITO layer fails in the orthogonal direction due to lateral contraction of the polymer substrate. The gradual increase in resistance is modeled assuming there is a conducting layer at the polymer/ITO interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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