Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-06-01T01:40:54.074Z Has data issue: false hasContentIssue false

Mechanical Behavior of Indium Oxide Thin Films on Polymer Substrates

Published online by Cambridge University Press:  10 February 2011

D. R. Cairns
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
S. M. Sachsman
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
D. K. Sparacin
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
R. P. Witte II
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
G. P. Crawford
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
D. C. Paine
Affiliation:
Brown University, Division of Engineering, Box D, Providence, RI, 02912
Get access

Abstract

We report on the change in electrical resistance of tin doped indium oxide thin films on polymer substrates with increasing uniaxial strain. The resistance increases rapidly but continuously above a threshold strain. The threshold strain at which the resistance increases is correlated to the onset of cracking in the oxide film. The strain for cracking and increase in resistance depend upon film thickness. We have measured the distance between neighboring ITO cracks as a function of strain in situ using an optical microscope. At high uniaxial strains the ITO layer fails in the orthogonal direction due to lateral contraction of the polymer substrate. The gradual increase in resistance is modeled assuming there is a conducting layer at the polymer/ITO interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kim, J.-H., Vorflusev, V. and Kumar, S., SID '99 Digest, 880 (1999).Google Scholar
2. Vorflusev, V., Sergan, T. and Kumar, S., SID '98 Digest, 786 (1998).Google Scholar
3. West, J. L., Rouberol, M., Franci, J. J., Li, Y., Doane, W. and Pfeiffer, M., Asia Display '95, 55 (1995).Google Scholar
4. Burrows, P. E., Gu, G., Bulovic, V., Shen, Z., Forrest, S. R. and Thomson, M. E., IEEE Transactions on Electron Devices, 44, 1188 (1997).Google Scholar
5. Buchanan, M., Webb, J. B. and Williams, D. F., Appl. Phys. Lett., 37, 213 (1980).Google Scholar
6. Chiou, B.-S. and Hsieh, S. - T., Thin Solid Films, 229, 146 (1993).Google Scholar
7. Mansingh, A. and Kumar, S. V. R. Vasant, Thin Solid Films, 167, L11 (1988).Google Scholar
8. Wang, J. S., Sugimura, Y., Evans, A. G. and Tredway, W. K., Thin Solid Films, 325, 163 (1998).Google Scholar
9. Letterier, Y., Boogh, L., Andersons, J. and Manson, J.-A. E., J. Polym. Sci. B: Polym. Phys., 35, 1449 (1997)Google Scholar
10. Cairns, D. R., Witte, R. P. II, Sparacin, D. K., Sachsman, S. M., Paine, D. C., Crawford, G. P. and Newton, R. R., submitted to Applied Physics Letters (October 1999).Google Scholar