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Nature and Formation of Non-Radiative Defects in GaNAs And InGaAsN

Published online by Cambridge University Press:  21 March 2011

W. M. Chen ,
N. Q. Thinh ,
I. A. Buyanova ,
P. N. Hai ,
H. P. Xin ,
C. W. Tu ,
Wei Li  and
M. Pessa
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
N. Q. Thinh
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
I. A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
P. N. Hai
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
H. P. Xin
Affiliation:
Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, USA
C. W. Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California, La Jolla, CA 92093-0407, USA
Wei Li
Affiliation:
Optoelectronics Research Center, Tampere University of Technology, FIN-33101 Tampere, Finland
M. Pessa
Affiliation:
Optoelectronics Research Center, Tampere University of Technology, FIN-33101 Tampere, Finland
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Abstract

The optically detected magnetic resonance (ODMR) technique has been employed to examine the nature and formation mechanism of non-radiative defects in GaNAs and InGaAsN. In both alloys, two defects were observed and were shown to be deep-level, non-radiative recombination centers. One of the defects has been identified as a complex involving an AsGa antisite. These two defects gain more importance with increasing N composition up to 3%, presumably due to an increase in their concentration. With a further higher N composition, the defects start to lose importance in carrier recombination that is attributed to an increasingly important role of other new non-radiative channels introduced with a high N composition. On the other hand, effect of In composition up to 3% seems to be only marginal. Both defects were shown to be preferably introduced in the alloys during low-temperature growth by molecular beam epitaxy (MBE), but can be rather efficiently removed by post-growth rapid thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H2.6.1
Copyright
Copyright © Materials Research Society 2002

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