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Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells

Published online by Cambridge University Press:  15 February 2011

K. Rammohan ,
D.H. Rich  and
A. Larsson
K. Rammohan
Affiliation:
Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA 90089-0241
D.H. Rich
Affiliation:
Department of Materials Science and Engineering, University of Southern California, Los Angeles, CA 90089-0241
A. Larsson
Affiliation:
Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology, Göteborg, Sweden
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Abstract

The temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 115
Copyright
Copyright © Materials Research Society 1995

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References

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