No CrossRef data available.
Article contents
Temperature Dependence of Cathodoluminescence From InxGa1-xAs/GaAs Multiple Quantum Wells
Published online by Cambridge University Press: 15 February 2011
Abstract
The temperature dependence of the cathodoluminescence (CL) originating from In0.21Ga0.79As/GaAs multiple quantum wells has been studied between 86 and 250 K. The CL intensity exhibits an Arrenhius-type dependence on temperature (T), characterized by two different activation energies. The spatial variations in activation energy caused by the presence of interfacial misfit dislocations is examined. The CL intensity dependence on temperature for T ≲ 150 K is controlled by thermally activated nonradiative recombination. For T ≳ 150 K the decrease in CL intensity is largely influenced by thermal re-emission of carriers out of the quantum wells.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1995