Published online by Cambridge University Press: 05 June 2014
A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper. The calculations were made using a self-consistent solution of the Schrödinger-Poisson equations and an AlGaN/GaN HEMTs numerical device model. Transconductance characteristics of the devices are discussed while the thickness and Al composition of the graded AlGaN layer are optimized. It is found that graded AlGaN layer structure can tailor device’s gm − Vgs profile by improving polar optical phonon mobility and interface roughness mobility. Good agreement is obtained between the theoretical calculations and experimental measurements over the full range of applied gate bias.
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