Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications
Research Article
The Role of Nitrogen-Induced Localization and Defects in InGaAsN (? 2% N): Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition
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- 21 March 2011, H1.7.1
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Pulsed Laser Deposition and Characterization of Zn1−xMnxO Films
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- 21 March 2011, H11.5.1
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Effects of As Doping on Properties of ZnO Films
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- 21 March 2011, H11.8.1
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Shallow-donor states in spherical quantum dots with parabolic confinement
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- 21 March 2011, H9.20.1
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Successes and Predictions of A Pseudopotential Approach in Anion-Mixed Nitrides
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- 21 March 2011, H1.3.1
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PbTe Flash Evaporation on Si <100> Substrates for Heterojunction Infrared Detectors
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- 21 March 2011, H4.4.1
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Interference lithography for 3D photonic band gap crystal layer by layer fabrication
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- 21 March 2011, K2.9.1
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Novel AlGaAs/CaF2 SESAM Device for Ultrashort Pulse Generation
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- 21 March 2011, H7.7.1
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Artificial Second Order Non-Linearity in Photonic Crystals
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- 21 March 2011, K9.5.1
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Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering
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- 21 March 2011, H1.1.1
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InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition
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- 21 March 2011, H11.6.1
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GaAs Photodetector for X-ray Imaging
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- 21 March 2011, H4.5.1
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Depth Profiling of SiC Lattice Damage Using Micro-Raman Spectroscopy
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- 21 March 2011, H6.6.1
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Optical Constants of Annealed a-Si:H from Transmittance at Normal Incidence
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- 21 March 2011, H9.8.1
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Improved Routes towards Solution Deposition of Indium Sulfide Thin Films for Photovoltaic Applications:
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- 21 March 2011, H9.33.1
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Strategies For Direct Monolithic Integration of AlxGa(1−x)As/InxGa(1−x)As LEDS and Lasers On Ge/GeSi/Si Substrates Via Relaxed Graded GexSi(1−x) Buffer Layers
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- 21 March 2011, H9.30.1
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High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers
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- 21 March 2011, H9.17.1
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Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence
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- 21 March 2011, H9.5.1
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The Influence of Annealing Temperature and Doping on the Red/Near-Infrared Luminescence of Ion Implanted SiO2:nc-Si
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- 21 March 2011, H10.8.1
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I-V And C-V Characteristics of nGaAs-nInSb Heterojunctions Obtained by Pulsed Laser Deposition Technique
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- 21 March 2011, H9.25.1
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