Research Article
ScAlMgO4: an Oxide Substrate for GaN Epitaxy
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- 13 June 2014, e1
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Free Excitons in GaN
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- 13 June 2014, e2
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Study of GaN films grown by metalorganic chemical vapour deposition
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- 13 June 2014, e3
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Research on GaN MODFET's
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- 13 June 2014, e4
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Surface morphology of as grown and annealed bulk GaN crystals
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- 13 June 2014, e5
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The Morphology and Cathodoluminescence of GaN Thin Films
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- 13 June 2014, e6
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Yellow Band and Deep levels in Undoped MOVPE GaN.
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- 13 June 2014, e7
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Growth, Doping and Characterization of AlxGa1−xN Thin Film Alloys on 6H-SiC(0001) Substrates
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- 13 June 2014, e8
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Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
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- 13 June 2014, e9
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Growth and Doping of AlGaN Alloys by ECR-assisted MBE
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- 13 June 2014, e10
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Luminescence Spectra Of Superbright Blue and Green InGaN/AlGaN/GaN Light-Emitting Diodes
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- 13 June 2014, e11
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Growth Rate Reduction of GaN Due to Ga Surface Accumulation
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- 13 June 2014, e12
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Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
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- 13 June 2014, e13
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Bandgap Variation at the Isostructural Phase Transformation of Wurtzite InN
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- 13 June 2014, e14
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PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
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- 13 June 2014, e15
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Growth of Ga-face and N-face GaN films using ZnO Substrates
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- 13 June 2014, e16
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Alternative N precursors and Mg doped GaN grown by MOVPE
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- 13 June 2014, e17
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GaN m-i-n LED grown by MOVPE
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- 13 June 2014, e18
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Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
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- 13 June 2014, e19
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Recent Results in the Crystal Growth of GaN at High N2 Pressure
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- 13 June 2014, e20
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