Symposium C – Ion Beam Processing of Advanced Electronic Materials
Research Article
Point Defect Engineering Applied to Shallow Junction ULSI Processing
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- 21 February 2011, 3
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Is the End-of-Range Loops Kinetics Affected by Surface Proximity or Ion Beam Recoils Distribution?
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- 21 February 2011, 13
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Shallow Junction Formation in As-Implanted Si by Low-Temperature Rapid Thermal Annealing
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- 21 February 2011, 19
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Damage Removal of Low Energy Ion Implanted BF2 Layers in Silicon
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- 21 February 2011, 27
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Removal of End-of-Range Ion Implantation Defects in Silicon by Near Noble and Refractory Silicide Formation
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- 21 February 2011, 33
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ION Induced Crystallization and Amorphization of Silicon
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- 21 February 2011, 39
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Diffusion, Segregation, and Recrystallization in High-Dose Ion-Implanted Si
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- 21 February 2011, 45
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Lattice Strain from Holes in Heavily Doped Si:Ga
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- 21 February 2011, 53
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Reduction of Excess Self-Interstitials in Silicon by Germanium and Silicon Implantation-Induced Damage
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- 21 February 2011, 61
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The Ion Implanted Arsenic Tail in Silicon
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- 21 February 2011, 73
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Effect of Recoil Implantation of Oxygen on Boron Enhanced Diffusion in Silicon
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- 21 February 2011, 79
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Temperature Dependence of Damage in Boron-Implanted Silicon
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- 21 February 2011, 85
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Plasma Immersion Ion Implantation for Impurity Gettering in Silicon
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- 21 February 2011, 91
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Impurity Gettering by Implanted Carbon in Silicon
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- 21 February 2011, 97
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Crystal Stability and Microstructural Evolution in Polycrystalline Si Films During Ion Irradiation
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- 21 February 2011, 107
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Amorphization and Annealing of 6H SiC Implanted with N-Type, P-Type or Isovalent Dopants
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- 21 February 2011, 113
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In-Situ Reflectance Measurements of Measurements of During Ion Implantation
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- 21 February 2011, 119
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Focused Ion Beam Induced Deposition
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- 21 February 2011, 127
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Lattice Defects Generated by Ion Implantation into Submicron Si Areas
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- 21 February 2011, 143
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In-Situ Measurement of Ion Beam Induced Deposition of Gold
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- 21 February 2011, 155
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