Research Article
Distinguishing negatively-charged and highly conductive dislocations in gallium nitride using scanning Kelvin probe and conductive atomic force microscopy
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- 11 February 2011, L2.4
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Lattice Location and Cathodoluminescence Studies of Ytterbium/Thulium Implanted 2H-Aluminium Nitride
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- 11 February 2011, L6.16
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Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride
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- 11 February 2011, L12.2
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Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures
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- 11 February 2011, L11.57
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Growth and Characterization of Deep UV Emitter Structures Grown on Single Crystal Bulk AlN Substrates
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- 11 February 2011, L6.30
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Surface-Related Photoluminescence Effects in GaN
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- 11 February 2011, L11.2
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Single Crystalline InN Films Grown on Si Substrates By Using A Brief Substrate Nitridation Process
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- 11 February 2011, L3.26
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Nitrogen Gas-Cluster Ion Beam – A New Nitrogen Source for GaN Growth
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- 11 February 2011, L3.10
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AlGaN/GaN Heterostructure Field-Effect Transistors with Back-Doping Design for High-Power Applications: High Current Density with High Transconductance Characteristics
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- 11 February 2011, L9.3
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Development of a High Lateral Resolution Electron Beam Induced Current Technique for Electrical Characterization of InGaN-Based Quantum Well Light Emitting Diodes
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- 11 February 2011, L10.10
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Surface Passivation of AlGaN terminated and GaN Terminated HEMT Structures Studied by XPS
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- 11 February 2011, L11.40
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AlGaN/GaN HFETs for Automotive Applications
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- 11 February 2011, L11.45
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Room and Cryogenic Temperature Operation of 280 nm Deep Ultraviolet Light Emitting Diodes
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- 11 February 2011, L7.3
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Phase Transitions on Gan Surfaces
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- 11 February 2011, L3.9
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Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme
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- 11 February 2011, L1.2
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Microstructural Defects in Mg-doped AlGaN Layers Grown by Metalorganic Chemical Vapor Deposition
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- 11 February 2011, L11.60
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Studies on Epitaxial Relationship and Interface Structure of AlN/Si(111) and GaN/Si(111) Heterostructures
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- 11 February 2011, L3.24
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Electrical, Optical, Structural, and Analytical Properties of Very Pure GaN
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- 11 February 2011, L10.1
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Aluminum Nitride Crystal Growth by Halide Vapor Transport Epitaxy
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- 11 February 2011, L3.31
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Growth of Oriented Gallium Nitride Films on Amorphous Substrates by Self Assembly
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- 11 February 2011, L3.11
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