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From small angle x-ray scattering to reflectivity: Instrumentation and sample study
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- 31 January 2011, pp. 273-276
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Phase development of Bi-2212 superconductor: A time-resolved neutron powder diffraction investigation
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- 31 January 2011, pp. 277-280
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Interface structure of a YBa2Cu3O7−x/N/YBa2Cu3O7−x superconductor/normal metal/superconductor Josephson junction using YBa2Cu2.79Co0.21O7−x as the normal barrier N
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- 31 January 2011, pp. 281-287
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Numerical calculation of the crystal rotation effect on YBa2Cu3O7−x single crystal growth by the pulling method
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- 31 January 2011, pp. 288-295
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Air oxidation of undoped and B-doped polycrystalline diamond films at high temperature
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- 31 January 2011, pp. 296-304
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Surface and optical properties of porous silicon
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- 31 January 2011, pp. 305-320
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Characterization of InGaAsP materials by ultrahigh intensity post-ionization mass spectrometry: Relative sensitivity factors for zinc versus bulk constituents
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- 31 January 2011, pp. 321-324
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X-ray diffraction and x-ray photoelectron spectroscopy study of the Ru–Cu/SiO2 system prepared by low temperature reduction: Occurrence of a metastable amorphous or nanocrystalline phase
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- 31 January 2011, pp. 325-331
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Phase identification in a U–Zr/Ni–Cr diffusion couple using synchrotron radiation
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- 31 January 2011, pp. 332-340
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Fullerenic nanostructures in flames
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- 31 January 2011, pp. 341-347
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Effects of La2O3 and MnO2 on the piezoelectric properties of 0.02Pb(Y2/3W1/3)O3−0.98Pb(Zr0.52Ti0.48)03
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- 31 January 2011, pp. 348-352
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Sintering kinetics of silica-titania sol-gel films on silicon wafers
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- 31 January 2011, pp. 353-357
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Rapid consolidation processing of silicon nitride powders
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- 31 January 2011, pp. 358-362
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Preparation and characterization of GeS2
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- 31 January 2011, pp. 363-372
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Characterization of boron nitride thin films prepared from a polymer precursor
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- 31 January 2011, pp. 373-380
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Metal-organic deposition of thin-film yttria-stabilized zirconia-titania
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- 31 January 2011, pp. 381-386
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Size distribution of ultrafine particles in KDP aqueous solutions
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- 31 January 2011, pp. 387-390
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Chemical influence of inert gas on the thin film stress in plasma-enhanced chemical vapor deposited a-SiN: H films
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- 31 January 2011, pp. 391-398
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Characterization of highly oriented (110) TiN films grown on epitaxial Ge/Si(001) heterostructures
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- 31 January 2011, pp. 399-411
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A parametric study of titanium silicide formation by rapid thermal processing
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- 31 January 2011, pp. 412-421
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