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Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Published online by Cambridge University Press:  31 January 2011

Zhi-Hui Xu
Department of Mechanical Engineering, University of South Carolina, Columbia, South Carolina 29208
Young-Bae Park
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125
Xiaodong Li*
Department of Mechanical Engineering, University of South Carolina, Columbia, South Carolina 29208
a)Address all correspondence to this author. e-mail:
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Ion implantation has been widely used to improve the mechanical and tribological properties of single crystalline silicon, an essential material for the semiconductor industry. In this study, the effects of four different ion implantations, Ar, C, N, and Ne ions, on the mechanical and tribological properties of single crystal Si were investigated at both the nanoscale and the microscale. Nanoindentation and microindentation were used to measure the mechanical properties and fracture toughness of ion-implanted Si. Nano and micro scratch and wear tests were performed to study the tribological behaviors of different ion-implanted Si. The relationship between the mechanical properties and tribological behavior and the damage mechanism of scratch and wear were also discussed.

Copyright © Materials Research Society 2010

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1.Bhushan, B., Li, X.D.Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices. J. Mater. Res. 12, 54 (1997)Google Scholar
2.Bhushan, B., Gupta, B.K.Handbook of Tribology: Materials, Coating, and Surface Treatments (McGraw-Hill, New York 1991)Google Scholar
3.Szabadi, M., Hess, P., Kellock, A.J., Coufal, H., Baglin, J.E.E.Elastic and mechanical properties of ion-implanted silicon determined by surface-acoustic-wave spectrometry. Phys. Rev. B 58, 8941 (1998)Google Scholar
4.Sun, R., Xu, T., Xue, Q.J.Effect of Ar+ ion implantation on the nano-mechanical properties and microstructure of single crystal silicon. Appl. Surf. Sci. 249, 386 (2005)Google Scholar
5.Kodali, P., Hawley, M., Walter, K.C., Hubbard, K., Yu, N., Tesmer, J.R., Levine, T.E., Nastasi, M.Tribological properties of carbon- and nitrogen-implanted Si (100). Wear 205, 144 (1997)Google Scholar
6.Ueda, M., Lepienski, C.M., Rangel, E.C., Cruz, N.C., Dias, F.G.Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation. Surf. Coat. Technol. 156, 190 (2002)Google Scholar
7.Chu, P.K.Contamination issues in hydrogen plasma immersion ion implantation of silicon—A brief review. Surf. Coat. Technol. 156, 244 (2002)Google Scholar
8.Ovsyannikov, S.V., Shchennikov, V.V., Antonova, I.V., Shchennikov, V.V. Jr, Ponosov, Y.S.Effect of hydrogen implantation on semiconductor-metal transition and high-pressure thermopower in Si. Mater. Sci. Eng., A 462, 343 (2007)Google Scholar
9.Ueda, M., Beloto, A.F., Reuther, H., Parascandola, S.Plasma immersion ion implantation of nitrogen in Si: Formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects. Surf. Coat. Technol. 136, 244 (2001)Google Scholar
10.Swadener, J.G., Nastasi, M.Increasing the fracture toughness of silicon by ion implantation. Nucl. Instrum. Methods Phys. Res., Sect. B 206, 937 (2003)Google Scholar
11.Oliviero, E., Peripolli, S., Amaral, L., Fichtner, P.F.P., Beaufort, M.F., Barbot, J.F., Donnelly, S.E.Damage accumulation in neon implanted silicon. J. Appl. Phys. 100, 043505 (2006)Google Scholar
12.Mishra, P., Bhattacharyya, S.R., Ghose, D.Nanoindentation on single-crystal Si modified by 100 keV Cr+ implantation. Nucl. Instrum. Methods Phys. Res., Sect. B 266, 1629 (2008)Google Scholar
13.Nagy, P.M., Aranyi, D., Horvath, P., Peto, G., Kalman, E.Nanomechanical properties of ion-implanted Si. Surf. Interface Anal. 40, 875 (2008)Google Scholar
14.Stopping and Range of Ions in Matter Scholar
15.Simionescu, A., Hobler, G., Bogen, S., Frey, L., Ryssel, H.Model for the electronic stopping power of channeled ions in silicon around the stopping power maximum. Nucl. Instrum. Methods Phys. Res., Sect. B 106, 47 (1995)Google Scholar
16.Chen, X., Vlassak, J.A numerical study on the measurements of thin film mechanical properties by means of nanoindentation. J. Mater. Res. 16, 2974 (2001)Google Scholar
17.Xu, Z.H., Rowcliffe, D.Finite element analysis of substrate effects on indentation behavior of thin films. Thin Solid Films 447–448, 399 (2004)Google Scholar
18.Oliver, W.C., Pharr, G.M.An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7, 1564 (1992)Google Scholar
19.Xu, Z.H., Li, X.D.Effects of indenter geometry and material properties on the correction factor of Sneddon's relationship for nanoindentation of elastic and elastic-plastic materials. Acta Mater. 56, 1399 (2008)Google Scholar
20.Lawn, B.R., Evans, A.G., Marshall, D.B.Elastic/plastic indentation damage in ceramics: The median/radial crack system. J. Am. Ceram. Soc. 63, 574 (1980)Google Scholar
21.Franca, D.R., Blouin, A.All-optical measurement of in-plane and out-of-plane Young's modulus and Poisson's ratio in silicon wafers by means of vibration modes. Meas. Sci. Technol. 15, 859 (2004)Google Scholar
22.Follstaedt, D.M., Knapp, J.A., Myers, S.M.Mechanical properties of ion-implanted amorphous silicon. J. Mater. Res. 19, 338 (2004)Google Scholar
23.Brault, P., Ranson, P., Estrade-Szwarckopf, H., Rousseau, B.Chemical physics of fluorine plasma-etched silicon surfaces: Study of surface contaminations. J. Appl. Phys. 68, 1702 (1990)Google Scholar
24.Rats, D., Vandenbulcke, L., Herbin, R., Benoit, R., Erre, R., Serin, V., Sevely, J.Characterization of diamond films deposited on titanium and its alloys. Thin Solid Films 270, 177 (1995)Google Scholar
25.Chen, L.C., Yang, C.Y., Bhusari, D.M., Chen, K.H., Lin, M.C., Chuang, T.J.Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition. Diamond Relat. Mater. 5, 514 (1996)Google Scholar
26.Chourasia, A.R.Core level XPS spectra of silicon carbide using zirconium and magnesium radiations. Surf. Sci. Spectra 8, 45 (2001)Google Scholar
27.Kubler, L., Bischoff, J.L., Bolmont, D.General comparison of the surface processes involved in nitridation of Si (100)-2X1 by NH3 and in SiNx film deposition: A photoemission study. Phys. Rev. B 38, 13113 (1988)Google Scholar
28.Adachi, S., Mori, H., Takahashi, M.Model-dielectric-function analysis of ion-implanted Si (100) wafers. J. Appl. Phys. 93, 115 (2003)Google Scholar
29.Paramanik, D., Dey, S., Granesan, V., Varma, S.Shape transition of nanostructures created on Si (100) surface after MeV implantation. Nucl. Instrum. Methods Phys. Res., Sect. B 244, 74 (2006)Google Scholar
30.Mori, H., Adachi, S., Takahashi, M.Optical properties of self-ion-implanted Si (100) studied by spectroscopic ellipsometry. J. Appl. Phys. 90, 87 (2001)Google Scholar
31.Kuri, G., Yang, T.R.MeV Al+ and Al2+ ions implantation in Si (100): Surface roughness and defects in the bulk. Appl. Phys. A 79, 443 (2000)Google Scholar
32.Tsunoda, K., Adachi, S., Takahashi, M.Spectroscopic ellipsometry study of ion-implanted Si (100) wafers. J. Appl. Phys. 91, 2936 (2002)Google Scholar
33.Leyland, A., Matthews, A.On the significance of the H/E ratio in wear control: A nanocomposite coating approach to optimized tribological behaviour. Wear 240, 1 (2000)Google Scholar
34.Shi, B., Sullivan, J.L., Beake, B.D.An investigation into which factors control the nanotribological behaviour of thin sputtered carbon films. J. Phys. D: Appl. Phys. 41, 045303 (2008)Google Scholar
35.Li, X.D., Bhushan, B., Takashima, K., Baek, C.W., Kim, Y.K.Mechanical characterization of micro/nanoscale structures for MEMS/NEMS applications using nanoindentation techniques. Ultramicroscopy 97, 481 (2003)Google Scholar
36.Li, X.D., Bhushan, B.Micro/nanomechanical and tribological studies of bulk and thin-film materials used in magnetic recording heads. Thin Solid Films 398–399, 313 (2001)Google Scholar
37.Jensen, H., Jensen, U.M., Sorensen, G.Reactively sputtered Cr nitride coatings studies using the acoustic emission scratch test technique. Surf. Coat. Technol. 74–75, 297 (1995)Google Scholar
38.Cho, S.S., Komvopoulos, K.Correlation between acoustic emission and wear of multi-layer ceramic coated carbide tools. Trans. ASME 119, 238 (1997)Google Scholar
39.Cho, C.W., Lee, Y.Z.Wear-life evaluation of CrN-coated steels using acoustic emission signals. Surf. Coat. Technol. 127, 59 (2000)Google Scholar
40.Fischer, T.E., Zhu, Z., Kim, H., Shin, D.S.Genesis and role of wear debris in sliding wear of ceramics. Wear 245, 53 (2000)Google Scholar