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Non-polar GaN film growth on (0 1 0) gallium oxide substrate by metal organic chemical vapor deposition

Published online by Cambridge University Press:  17 April 2017

Yu Cao Open the ORCID record for Yu Cao [Opens in a new window] ,
Ray Li ,
Adam J. Williams ,
Rongming Chu ,
Andrea L. Corrion  and
Ryan Chang
Yu Cao*
Affiliation:
HRL Laboratories, LLC, Malibu, CA 90265-4797, USA
Ray Li
Affiliation:
HRL Laboratories, LLC, Malibu, CA 90265-4797, USA
Adam J. Williams
Affiliation:
HRL Laboratories, LLC, Malibu, CA 90265-4797, USA
Rongming Chu
Affiliation:
HRL Laboratories, LLC, Malibu, CA 90265-4797, USA
Andrea L. Corrion
Affiliation:
HRL Laboratories, LLC, Malibu, CA 90265-4797, USA
Ryan Chang
Affiliation:
HRL Laboratories, LLC, Malibu, CA 90265-4797, USA
*
a)Address all correspondence to this author. e-mail: yucao@hrl.com
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Abstract

To achieve the first demonstration of non-polar a-plane gallium nitride (GaN) epitaxy on (0 1 0) gallium oxide substrates by metal organic chemical vapor deposition (MOCVD), a low temperature AlGaN nucleation layer was engineered. Specific low temperature AlGaN growth parameters were necessary because the gallium oxide substrate begins to decompose at ∼600 °C in the ambient of H2. To achieve a smooth GaN epitaxial surface, low V/III molar ratio, and low pressure were required. To characterize the GaN film, AFM along with an orientation-dependent crystal tilt mosaic study by X-ray diffraction was performed. We effectively reduced threading dislocation density by applying in situ SiN interlayers grown by MOCVD. The oxygen contamination in the GaN film was found to originate from the substrate decomposition during GaN growth and can be reduced more than 10 times by using GaN buffer layer grown under N2 ambient.

Keywords

epitaxymetalorganic depositionoxide
Type
Invited Feature Papers
Information
Journal of Materials Research , Volume 32 , Issue 9 , 15 May 2017 , pp. 1611 - 1617
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Don W. Shaw

This paper has been selected as an Invited Feature Paper.

References

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