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Texture Evolution in Si/SiC Layered Structures Deposited on Si(001) by Chemical Vapor Deposition

Published online by Cambridge University Press:  31 January 2011

L-O. Björketun ,
L. Hultman ,
O. Kordina  and
J-E. Sundgren
L-O. Björketun
Affiliation:
Thin Film Physics Division, Department of Physics and Measurement Technology, Linköoping University, S-581 83 Linköping, Sweden
L. Hultman
Affiliation:
Thin Film Physics Division, Department of Physics and Measurement Technology, Linköoping University, S-581 83 Linköping, Sweden
O. Kordina
Affiliation:
Thin Film Physics Division, Department of Physics and Measurement Technology, Linköoping University, S-581 83 Linköping, Sweden
J-E. Sundgren
Affiliation:
Thin Film Physics Division, Department of Physics and Measurement Technology, Linköoping University, S-581 83 Linköping, Sweden
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Abstract

Texture evolution in Si/SiC multilayers deposited by atmospheric pressure chemical vapor deposition on carbonized Si(001) substrates was investigated using x-ray diffraction and transmission electron microscopy. SiC layers were epitaxial and (001)-oriented. Si layers deposited on the SiC exhibited a columnar structure with predominantly (110) orientation which could be related to the nucleation. Orientational relationships were Si[111] ║ SiC[110] and Si[112] ║ SiC[110]. Also, a low density of (112)-oriented columns was present. Extensive twinning on the vertical {111} planes within the Si columns led to domains of hexagonal stacking up to 10 nm in size with the presence of 2H-Si and 4H-Si. Subsequent SiC layer growth on the (110)-oriented Si layer resulted in a (110)-oriented SiC layer if the Si layer was carbonized prior to growth.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 9 , September 1998 , pp. 2632 - 2642
Copyright
Copyright © Materials Research Society 1998

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