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Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC

Published online by Cambridge University Press:  05 July 2012

Roberta Nipoti ,
Raffaele Scaburri ,
Anders Hallén  and
Antonella Parisini
Roberta Nipoti*
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi, Sezione di Bologna (CNR-IMM of Bologna), I-40129 Bologna, Italy
Raffaele Scaburri
Affiliation:
Consiglio Nazionale delle Ricerche, Istituto di Microelettronica e Microsistemi, Sezione di Bologna (CNR-IMM of Bologna), I-40129 Bologna, Italy
Anders Hallén
Affiliation:
KTH Royal Institute of Technology, School of Information and Communication Technology (School of ICT), SE-164 40, Kista-Stockholm, Sweden
Antonella Parisini
Affiliation:
Università di Parma, CNISM - Dipartimento di Fisica, I-43124 Parma, Italy
*
a)Address all correspondence to this author. e-mail: nipoti@bo.imm.cnr.it
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Abstract

The p-type doping of high purity semi-insulating 4H polytype silicon carbide (HPSI 4H-SiC) by aluminum ion (Al+) implantation has been studied in the range of 1 × 1019 to 8 × 1020 /cm3 (0.39 μm implanted thickness) and a conventional thermal annealing of 1950 °C/5 min. Implanted 4H-SiC layers of p-type conductivity and sheet resistance in the range of 1.6 × 104 to 8.9 ×102 Ω□, corresponding to a resistivity in the range of 4.7 × 10−1 to 2.7 × 10−2 Ω cm have been obtained. Hall carrier density and mobility data in the temperature range of 140–720 K feature the transition from a valence band to an intraband conduction for increasing implanted Al ion concentration from 1 × 1019 /cm3 to 4 × 1020 /cm3. A 73% electrical activation, 31% compensation and 146 meV ionization level have been obtained using a best-fit solution of the neutrality equation to Hall carrier data for the lowest concentration.

Keywords

dopantion implantationelectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 17 - 22
Copyright
Copyright © Materials Research Society 2012

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References

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