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Crystal orientation and near-interface structure of chemically vapor deposited MoS2 films

Published online by Cambridge University Press:  03 March 2011

Woo Y. Lee  and
Karren L. More
Woo Y. Lee
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381-6063
Karren L. More
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381-6063
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Abstract

Crystalline MoS2 films were deposited on Si and graphite substrates using MoF6 and H2S as precursors. The crystal orientation and near-interface structure of the MoS2 films were studied using transmission electron microscopy. In general, the preferred orientation of the (002) basal planes of the MoS2 films with respect to the substrate surface changed from parallel to perpendicular with increased deposition temperature from 320 to 430 °C. At 430 °C, the basal planes were primarily oriented perpendicular to the Si substrate, except for the presence of a ∼5 nm interface region in which the basal planes were oriented in the parallel direction. The formation of this transitional region was also observed on the graphite substrate.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 1 , January 1995 , pp. 49 - 53
Copyright
Copyright © Materials Research Society 1995

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References

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