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Deformation under nanoindents in Si, Ge, and GaAs examined through transmission electron microscopy

Published online by Cambridge University Press:  31 January 2011

S. J. Lloyd ,
J. M. Molina-Aldareguia  and
W. J. Clegg
S. J. Lloyd
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
J. M. Molina-Aldareguia
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
W. J. Clegg
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
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Abstract

Cross sections through nanoindents on Si, Ge, and GaAs {001} were examined through transmission electron microscopy. A focused ion beam workstation was used to machine electron transparent windows through the indents. In both Si and Ge there was a transformed zone immediately under the indent composed of amorphous material and a mixture of face-centered-cubic and body-centered cubic crystals. Cracking and dislocation generation were also observed around the transformed zone. In GaAs the dominant deformation mechanism was twinning on the {11} planes. The hardness of these materials is discussed in light of these observations and their macroscopic material properties such as phase transformation pressure.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 12 , December 2001 , pp. 3347 - 3350
Copyright
Copyright © Materials Research Society 2001

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