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Shear-activated indentation crack in GaAs single crystal

Published online by Cambridge University Press:  31 January 2011

Z. C. Li ,
L. Liu ,
L. L. He ,
Y. B. Xu  and
X. Wu
Z. C. Li*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
L. Liu
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
L. L. He
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
Y. B. Xu
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
X. Wu
Affiliation:
Department of Mechanical and Engineering, Wayne State University, Michigan 48202
*
a)Address all correspondence to this author.zhchli@imr.ac.cn
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Abstract

Cracks induced by 0.049N load indentation on the surface of gallium arsenide single crystal were investigated before and after annealing. The results revealed that the crack initiation essentially relates to the shear deformation during indentation. There were dislocation generation, lattice distortion, and the transformation from crystalline to disordered structure, leading to the occurrence of an amorphous band in front of the crack tip. After being annealed at 500 °C for 60 min, the amorphous band disappeared, and instead, recrystallized grains appeared along the crack-propagation direction. It is reasonable to propose that crack propagation is the result of the decohesion of the amorphous band rather than the direct debonding along a certain atomic plane.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 10 , October 2001 , pp. 2845 - 2849
Copyright
Copyright © Materials Research Society 2001

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