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Doping, compensation, and photosensitivity of detector grade CdTe

Published online by Cambridge University Press:  31 January 2011

V. Babentsov ,
J. Franc ,
A. Fauler ,
M. Fiederle  and
R.B. James
V. Babentsov
Affiliation:
Institute for Semiconductor Physics, Kiev 03028, Ukraine
J. Franc*
Affiliation:
Charles University, Faculty of Mathematics and Physics, Institute of Physics, Prague CZ 121 16, Czech Republic
A. Fauler
Affiliation:
Materialforschungszentrum, Freiburg D-79104, Germany
M. Fiederle
Affiliation:
Materialforschungszentrum, Freiburg D-79104, Germany
R.B. James
Affiliation:
Nonproliferation and National Security Directorate, Brookhaven National Laboratory, Upton, New York 11973
*
a)Address all correspondence to this author. e-mail: franc@karlov.mff.cuni.cz
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Abstract

We studied the resistivity, photosensitivity, photoluminescence, and surface photovoltage of CdTe crystals doped with Ge or Sn to extend our knowledge of the influence of the deep-donor level on compensation and afterglow effects. We demonstrated a strong correlation between photosensitivity caused by photoelectrons with Fermi-level variations near the GeCd0/2+ or SnCd0/2+ energy levels. Surface photovoltage measurements confirmed that when the concentration of residual acceptors varied along the direction of growth, then trapping conditions dramatically changed as a defect was converted from a neutral state to doubly charged positive one.

Keywords

LuminescencePhotoconductivityII-VI
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 6 , June 2008 , pp. 1751 - 1757
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Schlesinger, T.E., Toney, J.E., Yoon, H., Lee, E.Y., Brunett, B.A., Franks, L.James, R.B.: Cadmium zinc telluride and its use as a nuclear radiation detector material. Mater. Sci. Eng., R 32, 103 2001Google Scholar
2Szeles, Cs.: Advances in the crystal growth and device fabrication technology of CdZnTe room temperature radiation detectors. IEEE Trans. Nucl. Sci. 51, 1242 2004CrossRefGoogle Scholar
3Fiederle, M., Babentsov, V., Fauler, A., Witte, W., Benz, K.W.James, R.B.: Semi-insulating cadmium telluride at low impurity concentrations. J. Mater. Res. 19, 405 2004CrossRefGoogle Scholar
4Fiederle, M., Fauler, A., Konrath, J., Babentsov, V., Franc, J.James, R.B.: Comparison of undoped and doped high resistivity CdTe and (Cd,Zn)Te detector crystals. IEEE Trans. Nucl. Sci. 51, 1864 2004CrossRefGoogle Scholar
5Franc, J., Grill, R., Kubat, J., Hlidek, P., Belas, E., Moravec, P.Hoschl, P.: Influence of space charge on lux-ampere characteristics of high-resistivity CdTe. J. Electron. Mater. 35, 988 2006CrossRefGoogle Scholar
6Babentsov, V., Franc, J., Elhadidy, H., Fauler, A., Fiederle, M.James, R.B.: Dependence of the Sn0/2+ charge state on the Fermi level in semi-insulating CdTe. J. Mater. Res. 22, 3249 2007CrossRefGoogle Scholar
7Fiederle, M., Babentsov, V., Franc, J., Fauler, A., Benz, K.W., James, R.B.Cross, E.: Defect structure of Ge doped CdTe. J. Cryst. Growth 243, 77 2002Google Scholar
8Franc, J., Fiederle, M., Babentsov, V., Fauler, A., Benz, K.W.James, R.B.: Defect structure of Sn doped CdTe. J. Electron. Mater. 32, 772 2003CrossRefGoogle Scholar
9Franc, J., Elhadidy, H., Babentsov, V., Fauler, A.Fiederle, M.: Comparative study of vertical gradient freeze grown CdTe with variable Sn concentration. J. Mater. Res. 21, 1025 2006CrossRefGoogle Scholar
10Stibal, R., Windscheif, J.Jantz, W.: Contactless evaluation of semiinsulating GaAs wafer resistivity using time-dependent charge measurements. Semicond. Sci. Technol. 6, 995 1991Google Scholar
11Becker, U., Zimmermann, H., Rudolph, P.Boyn, R.: Optical study of the impurity distribution in vertical-Bridgman-grown CdTe crystals. Phys. Status Solidi A 112, 569 1998CrossRefGoogle Scholar
12Horodyský, P., Franc, J., Grill, R., Hlídek, P.Höschl, P.: Impurity segregation in CdZnTe by photoluminescence mapping. Phys. Status Solidi C 3, 730 2006CrossRefGoogle Scholar
13Kronik, L.Shapira, Y.: Surface photovoltage phenomena: Theory, experiment and applications. Surf. Sci. Rep. 37, 1 1999CrossRefGoogle Scholar
14Jantsch, W.Hendorfer, G.: Characterization of deep levels in CdTe by photo-EPR and related techniques. J. Cryst. Growth 101, 404 1990CrossRefGoogle Scholar
15Jaffe, J.E.: Computational study of Ge and Sn doping of CdTe. J. Appl. Phys. 99, 033704 2006Google Scholar
16Adler, D.Yoffa, E.J.: Electronic structure of amorphous semiconductors. Phys. Rev. Lett. 36, 1197 1976Google Scholar