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Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study

  • S. Naskar (a1), S.D. Wolter (a2), C.A. Bower (a3), B.R. Stoner (a1) and J.T. Glass (a2)...

Thick SiOxNy films were deposited by radiofrequency (rf) plasma chemical vapor deposition using silane (SiH4) and nitrous oxide (N2O) source gases. The influence of deposition conditions of gas flow ratio, rf plasma mixed-frequency ratio (100 kHz, 13.56 MHz), and rf power on the refractive index were examined. It was observed that the refractive index of the SiOxNy films increased with N and Si concentration as measured via x-ray photoelectron spectroscopy. Interestingly, a variation of refractive index with N2O:SiH4 flow ratio for the two drive frequencies was observed, suggesting that oxynitride bonding plays an important role in determining the optical properties. The two drive frequencies also led to differences in hydrogen concentration that were found to be correlated with refractive index. Hydrogen concentration has been linked to significant optical absorption losses above index values of ∼1.6, which we identified as a saturation level in our films.

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1 R. Germann , H.W.M. Salemink , R. Beyeler , G.L. Bona , F. Horst , I. Massarek B.J. Offrein : Silicon oxynitride layers for optical waveguide applications. J. Electrochem. Soc. 147(6), 22372000

2 K.E. Mattsson : Plasma enhanced growth, composition and refractive index of silicon oxynitride films. J. Appl. Phys. 77(12), 66161995

3 M.I. Alayo , I. Pereyra M.N.P. Carreno : Thick SiOxNy and SiO2 films obtained by PECVD technique at low temperatures. Thin Solid Films 332, 401998

4 M.I. Alayo , I. Pereyra , W.L. Scopel M.C.A. Fantini : On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films. Thin Solid Films 402, 1542002

7 K. Worhoff , A. Driessen , P.V. Lambeck , L.T.H. Hilderink , P.W.C. Linders Th.J.A. Popma : Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics. Sens. Actuators 74, 91999

8 K. Worhoff , P.V. Lambeck A. Driessen : Design, tolerance analysis and fabrication of silicon oxynitride based planar optical waveguides for communication devices. J. Light-wave Technol. 17(8), 14011999

9 D.V. Tsu , G. Lucovsky , M.J. Mantini S.S. Chao : Deposition of silicon oxynitride thin films by remote plasma enhanced chemical vapor deposition. J. Vac. Sci. Technol., A 5, 19981987

10 G. Lucovsky , P.D. Richard , D.V. Tsu , S.Y. Lin R.J. Markunas : Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor deposition. J. Vac. Sci. Technol., A 4, 6811986

11 S.S. Chao , J.E. Tyler , D.V. Tsu , G. Lucovsky M.J. Mantini : Auger electron spectroscopy studies of silicon nitride, oxide, and oxynitride thin films: Minimization of surface damage by argon and electron beams. J. Vac. Sci. Technol., A 5, 12831987

12 M.L. Green , E.P. Gusev , R. Degraeve E.L. Garfunkel : Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits. J. Appl. Phys. 90, 20572001

13 E.P. Gusev , H.C. Lu , E. Garfunkel , T. Gustafsson , M.L. Green , D. Brasen W.N. Lennard : Nitrogen engineering of ultrathin oxynitrides by a thermal NO/O2/NO process. J. Appl. Phys. 84, 29801998

14 E.P. Gusev , H.C. Lu , T. Gustafsson , E. Garfunkel , M.L. Green D. Brasen : The composition of ultrathin silicon oxynitrides thermally grown in nitric oxide. J. Appl. Phys. 82, 8961997

15 H.C. Lu , E.P. Gusev , T. Gustafsson E. Garfunkel : Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides. J. Appl. Phys. 81, 69921997

16 B.H. Augustine , E.A. Irene , Y.J. He , K.J. Price , L.E. McNeil , K.N. Kristensen D.M. Maher : Visible light emission from thin films containing Si, O, N, and H. J. Appl. Phys. 78(6), 40201995

19 D.L. Smith : A.S. Alimonda, C-C. Chen, S.E. Ready, and B. Wacker: Mechanism of SiNxHy deposition from NH3–SiH4 plasma. J. Electrochem. Soc. 137, 6141990

20 D.L. Smith , A.S. Alimonda F.J. Von Preissig : Mechanism of SiNxHy deposition from N2–SiH4 plasma. J. Vac. Sci. Technol., B 8, 5511990

21 S. Naskar , C.A. Bower , S.D. Wolter , B.R. Stoner J.T. Glass : Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films. Appl. Phys. Lett. 87, 261,9072005

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Journal of Materials Research
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