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Effects of substrate pretreatment and methane fraction on the optical transparency of nanocrystalline diamond thin films

Published online by Cambridge University Press:  31 January 2011

D. M. Bhusari
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
J. R. Yang
Affiliation:
Department of Mechanical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan
T. Y. Wang
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
K. H. Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
S. T. Lin
Affiliation:
Department of Mechanical Engineering, National Taiwan Institute of Technology, Taipei, Taiwan
L. C. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
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Extract

Optical transmittance of the nanocrystalline diamond films has been studied as a function of grain size of the diamond powder used for substrate pretreatment and the methane fraction in the source gas. It has been observed that for CH4 fractions below 13%, the films grown on substrates pretreated with finer diamond powder are more transparent, while this trend reverses for CH4 fractions above 13%. These variations in the transparency of the films correlate very well with their corresponding surface roughness. Nanocrystalline/amorphous diamond films with transmittance of greater than 80% beyond 700 nm and with average surface roughness as low as 61 Å have been obtained for CH4 fractions as high as 42% in the source gas. Interestingly, these films do not show an obvious presence of any graphitic carbon, and the structural ordering of the amorphous sp3-bonded phase also seems to be insensitive to the CH4 content of the source gas.

Type
Articles
Copyright
Copyright © Materials Research Society 1998

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References

1.Chen, K. H., Wu, J. Y., Chen, L.C., Juan, C. C., and Hsu, T., Electrochemical Soc. Proc. 95–21, 57 (1995).Google Scholar
2.Chen, K. H., Lai, Y. L., Chen, L. C., Wu, J. Y., and Kao, F. J., Thin Solid Films 270, 143 (1995).CrossRefGoogle Scholar
3.Erz, R., Dotter, W., Jung, K., and Erhardt, H., Diam. Relat. Mater. 2, 449 (1993).CrossRefGoogle Scholar
4.Ong, T. P. and Chang, R. P. H., Appl. Phys. Lett. 55, 2063 (1989).CrossRefGoogle Scholar
5.Wu, R. L. C., Rai, A.K., Garscadden, A., Lee, P., Desai, H. D., and Miyoshi, K., J. Appl. Phys. 72, 110 (1992).CrossRefGoogle Scholar
6.Bhusari, D. M., Yang, J. R., Wang, T. Y., Lin, S. T., Chen, K. H., and Chen, L. C., Solid State Commun.(in press).Google Scholar
7.Konov, V. I., Smolin, A. A., Ralchenko, V. G., Pimenov, S. M., Obraztsova, E. D., Loubmin, E. N., Metev, S. M., and Sepold, G., Diam. Relat. Mater. 4, 1073 (1995).CrossRefGoogle Scholar
8.Lee, J., Hong, B., Messier, R., and Collins, R. W., Appl. Phys. Lett. 69, 1716 (1996).CrossRefGoogle Scholar
9.Muranaka, Y., Yamashita, H., and Miyadera, H., Diam. Films Technol. 5, 1 (1995).Google Scholar
10.Tauc, J., in Amorphous and Liquid Semiconductors, edited by Tauc, J. (Plenum Press, 1974), p. 159.CrossRefGoogle Scholar
11.Merkulov, V. I., Lannin, J. S., Munro, C. H., Asher, S. A., Veerasamy, V. S., and Milne, W. I., Phys. Rev. Lett. 78, 4869 (1997).CrossRefGoogle Scholar