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Enhanced electroluminescence performance of all-inorganic quantum dot light-emitting diodes: A promising candidate for hole transport layer of Cu-doped NiO nanocrystals

Published online by Cambridge University Press:  29 April 2019

Yi-Dong Zhang Open the ORCID record for Yi-Dong Zhang [Opens in a new window]  and
Lei Zhao
Yi-Dong Zhang*
Affiliation:
Key Laboratory for Micro-Nano Energy Storage and Conversion Materials of Henan Province, Institute of Surface Micro and Nano Materials, Xuchang University, Xuchang 461000, People’s Republic of China
Lei Zhao
Affiliation:
School of Electronic and Information Engineering, Lanzhou City University, Lanzhou, Gansu Province 730070, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: zyd630@126.com
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Abstract

Fabrication and characterization of solution-processed, all-inorganic quantum dots (QDs) light-emitting diodes (QLEDs) incorporating colloidal CdSe/ZnS QDs are presented. Using a simple solvothermal process, Cu-doped NiO nanocrystals were fabricated and applied as a hole transport layer in all inorganic QLEDs. Cu-doped NiO nanocrystals are ascribed to bunsenite cubic structure. The transmittance of the film is more than 81%. The hole-only devices of Au/QDs/Cu–NiO/ITO structures showed that 5% mol Cu doped NiO film obtained the largest hole current. The resulting devices show pure QD electroluminescent emissions with a maximum electroluminescence brightness of 2258 cd/m2 after doping 5% mol Cu in NiO, which is almost 4-fold compared with that of intrinsic NiO due to the enhanced carrier concentration and conductivity. The current efficiency and EQE of the assembled all-inorganic QLED exhibited the maximum values of 1.18 cd/A and 1.223%, respectively.

Keywords

NiO filmsCu dopingall-inorganic QLEDs
Type
Article
Information
Journal of Materials Research , Volume 34 , Issue 16 , 28 August 2019 , pp. 2757 - 2764
Copyright
Copyright © Materials Research Society 2019 

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