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Epitaxial growth of semiconducting LaVO3 thin films

Published online by Cambridge University Press:  31 January 2011

Woong Choi ,
Timothy Sands  and
Kwang-Young Kim
Woong Choi
Affiliation:
Department of Materials Science & Mineral Engineering, University of California, Berkeley, California 94720
Timothy Sands
Affiliation:
Department of Materials Science & Mineral Engineering, University of California, Berkeley, California 94720
Kwang-Young Kim
Affiliation:
Display R&D Center, LG Electronics, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724, Korea
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Extract

Epitaxial thin films of LaVO3 were grown on (001) LaAlO3 substrates by pulsed laser deposition from a LaVO4 target in a vacuum ambient at substrate temperatures ≥500 °C. X-ray diffraction studies showed that epitaxial LaVO3 films consist of mixed domains of [110] and [001] orientations. Thermoprobe and four-probe conductivity measurements demonstrated the p-type semiconducting behavior of the epitaxial LaVO3 films. The temperature dependence of the conductivity is consistent with a thermally activated hopping mechanism with an activation barrier of 0.16 eV.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 1 - 3
Copyright
Copyright © Materials Research Society 2000

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References

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