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Grain growth of precursor-derived nanocrystalline gallium nitride powder

Published online by Cambridge University Press:  31 January 2011

M. Puchinger ,
D. J. Kisailus ,
F. F. Lange  and
T. Wagner
M. Puchinger
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
D. J. Kisailus
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106
F. F. Lange
Affiliation:
Materials Department, University of California, Santa Barbara, California 93106
T. Wagner*
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
*
a) Address all correspondence to this author.
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Abstract

Nanocrystalline gallium nitride powder was synthesized from a gallium dimethylamide-derived polymeric precursor by pyrolysis in ammonia atmosphere to study the grain growth mechanisms in the temperature range 800–1150 °C. In particular, growth exponents and activation energies were determined. Up to 900 °C, grain growth was inhibited, whereas, above 1000 °C, evaporation–condensation was identified as the dominant material transport path.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 2 , February 2002 , pp. 353 - 357
Copyright
Copyright © Materials Research Society 2002

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