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Interaction between semicoherent interfaces and Volterra-type dislocations in dissimilar anisotropic materials

Published online by Cambridge University Press:  07 August 2017

Aurélien Vattré  and
Ernian Pan
Aurélien Vattré*
Affiliation:
CEA, DAM, DIF, Arpajon F-91297, France
Ernian Pan
Affiliation:
Department of Civil Engineering and Department of Mathematics, University of Akron, Akron, Ohio 44325, USA
*
a)Address all correspondence to this author. e-mail: aurelien.vattre@cea.fr
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Abstract

The interaction between interface dislocation networks and a single lattice Volterra-type dislocation is analyzed by superposition using anisotropic elastic theory in dissimilar materials. The general and nontrivial field solutions for the displacements and stresses are derived by applying the Stroh sextic formalism and Fourier transform in heterogeneous bimaterials. The present approach therefore enables the calculation of the elastic interaction forces for the glide and climb components with different elastic constants and unequal partitioning of elastic fields between adjacent crystals neighboring a semicoherent heterophase interface. Two-dimensional application examples to the pure misfit Au/Cu interface are evaluated, where the infinitely long straight lattice dislocation, parallel to the interface dislocations, is embedded in Au. The repulsive and attractive interaction forces between these two types of (intrinsic and extrinsic) defects are investigated and discussed, for which the results provide a novel basis for examining multiple large-scale dislocation interactions in anisotropic interface-dominated materials with accurate mechanical boundary conditions.

Keywords

dislocationselastic properties
Type
Invited Article
Information
Journal of Materials Research , Volume 32 , Issue 21: Focus Issue: Jan van der Merwe: Epitaxy and the Computer Age , 14 November 2017 , pp. 3947 - 3957
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: Johan Brand Malherbe

References

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