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Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications

Published online by Cambridge University Press:  31 January 2011

Xiaomeng Chen ,
Gregory G. Peterson ,
Cindy Goldberg ,
Gerry Nuesca ,
Harry L. Frisch ,
Alain E. Kaloyeros ,
Barry Arkles  and
John Sullivan
Xiaomeng Chen
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Gregory G. Peterson
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Cindy Goldberg
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Gerry Nuesca
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Harry L. Frisch
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Alain E. Kaloyeros*
Affiliation:
New York State Center for Advanced Thin Film Technology and Department of Physics, The University at Albany–State University of New York, Albany, New York 12222
Barry Arkles
Affiliation:
Gelest Inc., Tullytown, Pennsylvania 19007
John Sullivan
Affiliation:
MKS Instruments Inc., Andover, Massachusetts 01810
*
a)Address all correspondence to this author.
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Abstract

A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNx from the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45 eV for the kinetically limited reaction regime. Additionally, a systematic design of experiments approach examined the effects of key process parameters, namely, substrate temperature, source temperature, and hydrogen and ammonia flows, on film properties. A wide CVD process window was established for nitrogen-rich amorphous TaNx with contamination below 1 at.%. Film conformality was higher than 95% in nominally 0.30 μm, 4.5: 1 aspect ratio, trench structures.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 2043 - 2052
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Nitta, T., Ohmi, T., Sakai, S., and Shibata, T., J. Electrochem. Soc. 140, 1131 (1993).CrossRefGoogle Scholar
2.Rao, G. P., Multilevel Interconnect Technology (McGraw-Hill, Inc., New York, 1994).Google Scholar
3.Takeyama, M., Noya, A., Sase, T., and Ohta, A., J. Vac. Sci. Technol. B14, 674 (1996).CrossRefGoogle Scholar
4.Kobeda, E., Warnock, J., Gambino, J., Brosky, S., and Basavaiah, S., J. Appl. Phys. 72, 2743 (1992).CrossRefGoogle Scholar
5.CRC Handbook of Chemistry and Physics, 71st ed., edited by Lide, J. (CRC Press, Cleveland, OH, 1991), pp. 4–109.Google Scholar
6.Reid, J. S., Kolawa, E., and Nicolet, M., J. Mater. Res. 7, 2424 (1992).CrossRefGoogle Scholar
7.Holloway, K., Fryer, P. M., Cabral, C., and Bailey, P. J., J. Appl. Phys. 71, 5433 (1992).CrossRefGoogle Scholar
8.Hieber, K., Thin Solid Films 24, 157 (1974).CrossRefGoogle Scholar
9.Fix, R., Gordon, R., and Hoffman, D., Chem. Mater. 5, 614 (1993).CrossRefGoogle Scholar
10.Chiu, H. and Chang, W., J. Mater. Sci. Lett. 11, 92 (1992).Google Scholar
11.Tsai, M., Appl. Phys. Lett. 67, 1129 (1995).Google Scholar
12.Barin, I., Knacke, O., and Kubaschewski, O., Thermochemical Properties of Inorganic Substances Supplement (Springer-Verlag, Berlin, Heidelberg, New York, 1977).CrossRefGoogle Scholar
13.Seel, M. and Bagus, P. S., Phys. Rev. B28, 2023 (1983).CrossRefGoogle Scholar
14.Faltermeier, C., Goldberg, C., Jones, M., Upham, A., Manger, D., Peterson, G., Lau, J., and Kaloyeros, A., J. Electronchem. Soc. 144, 1002 (1997).CrossRefGoogle Scholar
15. See, for example, Knorr, A., Talevi, R., Gundlach, H., Kumar, K. A., Peterson, G. P., Kaloyeros, A. E., Sullivan, J.J., and Loan, J., J. Vac. Sci. Technol. B15, 1758 (1997); andGoogle Scholar
Chen, X., Tantalum and Tantalum Nitride Films Grown by Inorganic Low Temperature Chemical Vapor Deposition for Copper Metallization: Chemistry, Process, and Material Development and Characterization (Doctoral Thesis, The University at Albany–SUNY Press, Albany, New York, 1998).Google Scholar
16.Moulder, J., Stickle, W., Sobol, P., and Bomken, K., Perkin-Elmer Corporation, Eden Prairie, MN (1992).Google Scholar
17.Toth, L., Transition Metal Carbides and Nitrides (Academic Press, New York, 1971), p. 188.Google Scholar
18.Murarka, S.P., Metallization: Theory and Practice for VLSI and ULSI (Butterworth-Heinemann, March 1993).Google Scholar
19. The National Technology Roadmap for Semiconductors (Semiconductor Research Association, San Jose, CA, 1997), pp. 99–113.Google Scholar
20.Yajima, A., Matsuzaki, R., and Saeki, Y., Denki Kagaku 51, 676 (1983).CrossRefGoogle Scholar
21.Chen, X., Peterson, G.G., Nuesca, G., Frisch, H.L., Kaloyeros, A. E., and Arkles, B., unpublished.Google Scholar