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Nucleation, growth, and structure of Al–Mn quasicrystalline thin films prepared by high-temperature vapor deposition

Published online by Cambridge University Press:  31 January 2011

P.B. Barna ,
A. Csanády ,
U. Timmer  and
K. Urban
P.B. Barna
Affiliation:
Hungarian Academy of Sciences, Institute of Technical Physics, P.O.B. 76, H-1325 Budapest, Hungary
A. Csanády
Affiliation:
Hungalu Aluterv FKI, P.O.B. 118, H-1389 Budapest, Hungary
U. Timmer
Affiliation:
Forschungszentrum Jülich GmbH, Institut für Festkörperforschung, Postfach 1913, D-W5170 Jülich, Germany
K. Urban*
Affiliation:
Forschungszentrum Jülich GmbH, Institut für Festkörperforschung, Postfach 1913, D-W5170 Jülich, Germany
*
a)Address correspondence to this author.
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Abstract

The nucleation and growth of quasicrystalline thin films during sequential vapor deposition of aluminum and manganese on various substrates have been studied at temperatures between 530 and 650 K. The films were analyzed by transmission electron microscopy, electron diffraction, energy dispersive x-ray analysis, replica techniques, and Auger depth profiling. The quasicrystalline phase is identified as icosahedral. It nucleates on the surfaces of the Al films. There is no indication of substantial bulk Mn diffusion. The growth process is governed by diffusion of Al to the quasicrystal surface where it reacts with the incident Mn.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 5 , May 1992 , pp. 1115 - 1125
Copyright
Copyright © Materials Research Society 1992

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