Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-05-18T16:02:38.563Z Has data issue: false hasContentIssue false
  • English
  • Français

Planar defects in ZnO thin films deposited on optical fibers and flat substrates

Published online by Cambridge University Press:  31 January 2011

Laurent Sagalowicz  and
Glen R. Fox
Laurent Sagalowicz
Affiliation:
Laboratoire de Céramique, D’epartement des Matériaux, EPFL, 1015 Lausanne, Switzerland
Glen R. Fox
Affiliation:
Laboratoire de Céramique, D’epartement des Matériaux, EPFL, 1015 Lausanne, Switzerland
Get access

Abstract

The microstructure and the defects of ZnO coatings deposited at room temperature by sputtering onto fibers and flat substrates were characterized using transmission electron microscopy (TEM), scanning electron microscopy, and x-ray diffraction (XRD). XRD shows that the films have a [0001] preferred orientation and a large angular width of the 0002 reflection. According to TEM observations, the film microstructure consists of columnar grains which contain large concentrations of basal planar defects and dislocations. High-resolution transmission electron microscopy analysis and the associated image simulation are in full agreement with the presence of single (type I) and double (type II) stacking faults. The relation between the observed defects and the 0002 peak broadening is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 1876 - 1885
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Hickernell, F. S., Proc. IEEE 64 (5), 631 (1976).CrossRefGoogle Scholar
2.Shiosaki, T. and Kawabata, A., Ferroelectrics 42, 219 (1982).Google Scholar
3.Ieda, M., Suzuoki, Y., Nakagawa, M., and Mizutani, T., IEEE Trans. Electr. Insulat. 25 (3), 599 (1990).Google Scholar
4.Mahmood, F. S., Gould, R. D., Hassan, A. K., and Salin, H. M., Thin Solid Films 270, 376 (1995).Google Scholar
5.Imura, M., Tanaka, T., Homma, M., and Okada, M., Mater. Trans. 35 (10), 730 (1994).Google Scholar
6.Heideman, R. G., Lambeck, P. V., and Gardeniers, J. G. E., Opt. Mater. 4, 741 (1995).Google Scholar
7.Nanto, H., Minami, T., Shooji, S., and Takata, S., J. Appl. Phys. 55 (4), 1029 (1984).Google Scholar
8.Lampe, U. and Müller, J., Sensors and Actuators 18, 269 (1989).Google Scholar
9.Wüthrich, C. R., Muller, C. A. P., Fox, G. R., and Limberger, H. G., Proceedings IEEE, International Conference on SolidState Sensors and Actuators (Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ, 1997), p. 97.Google Scholar
10.Fox, G. R., Wüthrich, C. R., Muller, C. A. P., and Setter, N., Ferroelectrics 201, 13–22 (1997).Google Scholar
11.Fox, G. R., Muller, C. A. P., Setter, N., Costantini, D. M., Ky, N. H., and Limberger, H. G., J. Vac. Sci. Technol. A 15 (3), 1791 (1997).CrossRefGoogle Scholar
12.Mermelstein, M. D., Appl. Opt. 22 (7), 1006 (1983).CrossRefGoogle Scholar
13.Imai, M., Tanizawa, H., Ohtsuka, Y., Takase, Y., and Odajima, A., J. Appl. Phys. 60 (6), 1916 (1986).CrossRefGoogle Scholar
14.Trolier-McKinstry, S., Fox, G. R., Kholkin, A., Muller, C. A. P., and Setter, N., in Materials for Smart Systems II, edited by George, E. P., Gotthardt, R., Otsuka, K., Trolier-McKinstry, S., and Wun-Fogle, M. (Mater. Res. Soc. Symp. Proc. 459, Pittsburgh, PA, 1997), pp. 189–194.Google Scholar
15.Hickernell, F. S., J. Vac. Sci. Technol. A 12 (4), 879 (1975).Google Scholar
16.Maniv, S. and Zangvil, A., J. Appl. Phys. 49 (5), 2787 (1978).Google Scholar
17.Krupanidhi, S. B. and Sayer, M., J. Appl. Phys. 56 (11), 3308–3317 (1984).Google Scholar
18.Van de Pol, F. C. M., Blom, F. R., and Popma, T. J. A., Thin Solid Films 204, 349 (1991).Google Scholar
19.Blom, F. R., Van de Pol, F. C. M., Bauhuis, G., and Popma, T. J. A., Thin Solid Films 204, 365 (1991).Google Scholar
20.Shiosaki, T. and Kawabata, A., Ferroelectrics 42, 219 (1982).CrossRefGoogle Scholar
21.Hickernell, F. S., IEEE Ultrason. Symp. Proc. 2, 785–794 (1980).Google Scholar
22.Matsuoka, M., Hoshi, Y., and Naoe, M., J. Appl. Phys. 63 (6), 2098 (1988).CrossRefGoogle Scholar
23.Ito, Y., Kushida, K., Kanda, H., Takeuchi, H., Sugawara, K., and Onozato, H., Ferroelectrics 134, 325 (1992).Google Scholar
24.Tominaga, K., Shirai, M., and Imai, H., Jpn. J. Appl. Phys. 30 (9B), 2216 (1991).CrossRefGoogle Scholar
25.Meng, L. and dos Santos, M. P., Thin Solid Films 250, 26–32 (1994).Google Scholar
26.Lad, R.J., Funkenbusch, P. D., and Aita, C. R., J. Vac. Sci. Technol. 17 (4), 808–811 (1980).CrossRefGoogle Scholar
27.Klug, H.P. and Alexander, L. E., X-Ray Diffraction Procedures, 2nd ed. (John Wiley and Sons, Inc., New York, 1974), pp. 618–708.Google Scholar
28.Blank, H., Delavignette, P., Gevers, R., and Amelinckx, S., Phys. Status Solidi 7, 747–764 (1964).CrossRefGoogle Scholar
29.Makovec, D. and Trontelj, M., J. Am. Ceram. Soc. 73 (5), 1202 (1994).Google Scholar
30.McCoy, M.A., Grimes, R.W., and Lee, W.E., J. Mater. Res. 11, 2009 (1996).CrossRefGoogle Scholar
31.Kim, J. C. and Goo, E., J. Am. Ceram. Soc. 73 (4), 877 (1990).Google Scholar
32.Rouvière, J-L., Arlery, M., Niebuhr, R., and Bachem, K.H., Inst. Phys. Conf. Ser. No. 146, 285 (1995).Google Scholar
33.Lee, N-E., Powell, R. C., Kim, Y-W., and Greene, J. E., J. Vac. Sc. Technol. A 13 (5), 2293 (1995).Google Scholar
34.Rouvière, J-L., Arlery, M., Daudin, B., Feuillet, G., and Briot, O., Mater. Sci. Eng. B 50, 61 (1997).CrossRefGoogle Scholar
35.Xin, Y., Brown, P. D., Humphreys, C. J., Cheng, T. S., and Foxon, C. T., Appl. Phys. Lett. 70, 1308 (1997).Google Scholar
36.Yoshino, Y., Iwasa, S., Aoki, H., Deguchi, Y., Yamamoto, Y., and Ohwada, K., in Thin Films–Structure and Morphology, edited by Moss, S. C., Ila, D., Cammarata, R. C., Chason, E. H., Einstein, Th. L., and Williams, E. I. (Mater. Res. Soc. Symp. Proc. 441, Pittsburgh, PA, 1997), p. 241.Google Scholar
37.Kang, H.B., Nakamura, K., Lim, S. H., and Shindo, D., Jpn. J. Appl. Phys. 37, 781 (1998).Google Scholar
38.Fox, G. R., Setter, N., and Limberger, H. G., J. Mater. Res. 11, 2051 (1996).CrossRefGoogle Scholar
39.Klug, H. P. and Alexander, L. E., X-Ray Diffraction Procedures, 2nd ed. (John Wiley and Sons, Inc., New York, 1974), pp. 175–270.Google Scholar
40.Sagalowicz, L., Fox, G. R., Dubois, M. A., Muller, C. A. P., Muralt, P., and Setter, N., J. Eur. Ceram. Soc. (1999, in press).Google Scholar
41.Stadelmann, P. A., Ultramicroscopy 21 (2), 131 (1987).Google Scholar
42.Mitra, G. B. and Halder, N. C., Acta Crystallogr. 17, 817 (1964).Google Scholar