Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-25T22:52:41.463Z Has data issue: false hasContentIssue false
  • English
  • Français

Precipitate splitting in Pb0.91La0.09Zr0.65Ti0.35O3 films

Published online by Cambridge University Press:  31 January 2011

Bahadir Tunaboylu ,
Ken Ring ,
Sadik C. Esener ,
Cengiz Ozkan  and
Ali Ata
Bahadir Tunaboylu
Affiliation:
Department of Electrical and Computer Engineering and Materials Science Program, University of California at San Diego, La Jolla, California 92093
Ken Ring
Affiliation:
Department of Electrical and Computer Engineering and Materials Science Program, University of California at San Diego, La Jolla, California 92093
Sadik C. Esener
Affiliation:
Department of Electrical and Computer Engineering and Materials Science Program, University of California at San Diego, La Jolla, California 92093
Cengiz Ozkan
Affiliation:
University of California Riverside, Department of Mechanical Engineering, Riverside, California 92521
Ali Ata
Affiliation:
Department of Materials Science, Gebze Institute of Technology, Gebze 41400, Kocaeli, Turkey
Get access

Abstract

The transformation to perovskite phase of Pb0.91La0.09Zr0.65Ti0.35O3 (9/65/35) films on r-sapphire and resulting annealed microstructures were examined by transmission electron microscopy. A random equiaxed polycrystalline grain morphology (approximately 600 nm) was observed after rapid-thermal annealing or furnace annealing when the as-deposited (radio-frequency-magnetron sputtering) films were predominantly pyrochlore. However, an interesting paired-plate structure was revealed after furnace annealing when the as-deposited films were fully perovskite. The average size of such a split precipitate was 35 nm in width and 150 nm in length.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 10 , October 2001 , pp. 2763 - 2766
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Miyazaki, T., Imamura, H., and Kozakai, T., Mater. Sci. Eng. 54, 9 (1982).CrossRefGoogle Scholar
2Maheshwari, A. and Ardell, A.J., Scripta Metall. Mater. 26, 374 (1992).CrossRefGoogle Scholar
3Li, D.Y. and Chen, L.Q., Acta Mater. 47, 247 (1999).CrossRefGoogle Scholar
4Tunaboylu, B., Harvey, P., and Esener, S.C., Integ. Ferroelectrics 19, 11 (1998).CrossRefGoogle Scholar
5Tunaboylu, B., McKittrick, J., and Esener, S.C., J. Mater. Sci. Lett.17, 1445 (1998).Google Scholar
6Tunaboylu, B., Harvey, P., and Esener, S.C., IEEE Trans. Ultrason. Ferroelectrics Freq. Control 45, 1105 (1998).CrossRefGoogle Scholar
7Chen, J., Udayakumar, K.R., Brooks, K.G., and Cross, L.E., J. Appl. Phys. 71, 4465 (1992).CrossRefGoogle Scholar
8Lin, Y.T., Subrahmanyan, R., Sitaram, A.R., and Orlowski, M., in Rapid Thermal and Integrated Processing II, edited by Gelpey, J.C., Elliott, J.K., Wortman, J.J., and Ajmera, A. (Mater. Res. Soc. Symp. Proc., 303, Pittsburgh, PA, 1993) p. 231.Google Scholar
9Hsueh, C.C. and McCartney, M.L., J. Mater. Res. 6, 2208 (1991).CrossRefGoogle Scholar
10Cross, J.S., Fujiki, M., Tsukada, M., Kotaka, Y., and Goto, Y., J. Mater. Res. 14, 4366 (1999).CrossRefGoogle Scholar
11Hu, H., Peng, C.J., and Krupanidhi, S.B., Thin Solid Films 223, 327 (1993).CrossRefGoogle Scholar
12Wasa, K., Satoh, T., Tabata, K., Adachi, H., Yabuuchi, Y., and Setune, K., J. Mater. Res. 9, 2960 (1994).CrossRefGoogle Scholar
13Lee, W.E. and Lagerlof, K.P.D., J. Electron Microsc. Tech. 2, 247 (1985).CrossRefGoogle Scholar
14Foster, C.M., Pompe, W., Daykin, A.C., and Speck, J.S., J. Appl. Phys. 79, 1405 (1996).CrossRefGoogle Scholar