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Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review

Published online by Cambridge University Press:  31 July 2012

Jayaprakasam Selvakumar  and
Dakshinamoorthy Sathiyamoorthy
Jayaprakasam Selvakumar*
Affiliation:
Powder Metallurgy Division, Bhabha Atomic Research Centre, Navi Mumbai 400 705, India
Dakshinamoorthy Sathiyamoorthy
Affiliation:
Powder Metallurgy Division, Bhabha Atomic Research Centre, Navi Mumbai 400 705, India
*
a)Address all correspondence to this author. e-mail: jselva@barc.gov.in
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Abstract

Next-generation fission and fusion nuclear reactor materials will be exposed to very high temperatures, intense neutron radiation, corrosive environments, and, mostly, all three at once. Grand opening will be given to the material, if they have stability at high temperature operating favorable in the extreme environments, self-healing, thermal as well as irradiation properties. Owing to the superior properties of silicon carbide, nuclear scientists are closely evaluating SiC-based materials for various applications in nuclear reactors. In the present perspective, relevant properties, challenging issues, and recommendations are emphasized. Based on our recent experiments, attempt to solve various uses on SiC-based materials in nuclear applications is described in detail.

Keywords

Chemical vapor depositionCeramicNuclear materials
Type
Review
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 136 - 149
Copyright
Copyright © Materials Research Society 2012

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References

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