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RuIn3-xSnx, RuIn3-xZnx, and Ru1-yIn3—new thermoelectrics based on the semiconductor RuIn3

Published online by Cambridge University Press:  27 July 2011

M. Wagner*
Affiliation:
Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden, Germany
R. Cardoso-Gil
Affiliation:
Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden, Germany
N. Oeschler
Affiliation:
Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden, Germany
H. Rosner
Affiliation:
Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden, Germany
Yu. Grin
Affiliation:
Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden, Germany
*
a)Address all correspondence to this author. e-mail: Maik.Wagner@cpfs.mpg.de
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Abstract

A systematic investigation of the intermetallic phase Ru1-yIn3 (0 ≤ y ≤ 0.025) and its substitution derivatives RuIn3-xSnx and RuIn3-xZnx (x = 0.01, 0.025, 0.05, and 0.1) is performed. The samples were prepared from a liquid–solid reaction of components with subsequent spark plasma sintering treatment. Ru1-yIn3 exhibits n- and p-type behavior crossing over from low to high temperatures. Substitution of indium by tin or zinc up to 2.5 at.% leads to an increase of the charge carrier concentration, with negative (Sn) or positive (Zn) Seebeck values, respectively. The electrical resistivity was P changed from semiconductor- to metal-like properties by substitution, whereas the thermal conductivity was reduced down to 50% of that of RuIn3. Higher values of the thermoelectric figure of merit were achieved by chemical substitution (RuIn3-xSnx, RuIn3-xZnx), opening up a possibility for tuning the thermoelectric properties in this class of materials.

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Articles
Copyright
Copyright © Materials Research Society 2011

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