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Structures and electrical properties of barium strontium titanate thin films grown by multi-ion-beam reactive sputtering technique

Published online by Cambridge University Press:  03 March 2011

C-J. Peng  and
S.B. Krupanidhi
C-J. Peng*
Affiliation:
Intercollege Material Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
S.B. Krupanidhi*
Affiliation:
Intercollege Material Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
*
a)Also with Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, Republic of China.
b)Also with Department of Engineering Science and Mechanics.
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Abstract

The structure and electrical properties of multi-ion beam reactive sputter (MIBERS) deposited barium strontium titanate (BST) films were characterized in terms of Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness, doping concentration, and secondary low-energy oxygen ion bombardment. Films deposited onto unheated substrates, followed by annealing at 700 °C showed lower dielectric constant (<200), compared to a dielectric constant of about 560 for those deposited at elevated temperatures, probably due to reduced voids. Two types of microstructures (type I and type II) were observed depending on the incipient phase of the as-grown films, which also led to two types of time domain dielectric response, Curie-von Schweidler and Debye type, respectively. The current-voltage (I-V) characteristics of type II films doped with high donor concentration showed a bulk space-charge-limited conduction (SCLC) with discrete shallow traps embedded in a trap-distributed background at high electric fields. The I-V characteristics of bombarded films deposited at higher substrate temperatures showed promising results of lower leakage currents and trap densities.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 3 , March 1995 , pp. 708 - 726
Copyright
Copyright © Materials Research Society 1995

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