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Study of the resputtering effect during rf-sputter deposition of YBCO films

Published online by Cambridge University Press:  03 March 2011

Jun-Hao Xu ,
B.M. Moon  and
K.V. Rao
Jun-Hao Xu
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
B.M. Moon*
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
K.V. Rao
Affiliation:
Department of Condensed Matter Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden
*
a)Present address: Department of Electrical Engineering, Korea University, Seoul, Korea.
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Abstract

We propose an angular redistribution model to understand the negative ions resputtering effect in sputter depositing YBa2Cu3O7−x (YBCO) films. On the basis of this model, the negative oxygen ions resputtering effect has been greatly minimized by introducing a Cu mask between the substrate and the target to block energetic oxygen particles from directly bombarding the growing film. Thus, YBCO films with almost exact stoichiometric composition and zero resistance critical temperatures as high as 90 K are obtained under oxygen partial pressure as low as 3 mTorr in a temperature regime well beyond that proposed by R.H. Hammond and R. Bormann. Preliminary results of a modified masking and shiclding technique to eliminate the resputtering effect and fabricate large area (>1 in. × 1 in.) YBCO superconducting films with high uniformity are also presented.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 4 , April 1995 , pp. 798 - 802
Copyright
Copyright © Materials Research Society 1995

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References

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