Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-26T18:01:47.218Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature dependence of photoluminescence properties of In-doped cadmium zinc telluride

Published online by Cambridge University Press:  31 January 2011

Tao Wang ,
Wanqi Jie ,
Dongmei Zeng ,
Ge Yang ,
Yadong Xu ,
Weihua Liu  and
Jijun Zhang
Tao Wang*
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Wanqi Jie
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Dongmei Zeng
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Ge Yang
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Yadong Xu
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Weihua Liu
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
Jijun Zhang
Affiliation:
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
*
a)Address all correspondence to this author. e-mail: czt.nwpu@gmail.com
Get access

Abstract

Temperature-dependent photoluminescence (PL) spectra were measured to characterize the In-doped cadmium zinc telluride (CdZnTe, or CZT) crystals along the growth direction in the range of 10 to 60 K. High-resistivity CZT samples with 1.2 ppm In dopant at the tip and low-resistivity samples with 60 ppm In dopant at the heel have been assessed. The PL intensity quenching of D0X were fitted with two activation energies for high-resistivity CZT sample and only one activation energy for low-resistivity sample, respectively, suggesting different recombination mechanisms. The C-line was observed in the PL spectra of low-resistivity CZT sample and considered to the results of the isoelectronic complexes, InCd–VCd–InCd, while in high-resistivity CZT sample, shallow donor accepted pair (DAP) transition was identified, and thought to be related to InCd–VCd. The A-center in PL spectra was observed in low-resistivity CZT sample, which is indicative of more cadmium vacancies. It turns out that indium in low-resistivity CZT sample has not been doped as efficiently as in high-resistivity CZT sample because of the self-compensation.

Keywords

II-VIOptical propertiesLuminescence
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 5 , May 2008 , pp. 1389 - 1392
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Li, G., Zhang, X., Hua, H.Jie, W.: A modified vertical bridgman method for growth of high-quality Cd1−xZnxTe crystals. J. Electron. Mater. 34(9), 1215 2005Google Scholar
2Schlesinger, T.E., Toney, J.E., Yoon, H., Lee, E.Y., Brunett, B.A., Franks, L.James, R.B.: Cadmium zinc telluride and its use as a nuclear radiation detector material. Mater. Sci. Eng. Rep. 32(4–5), 103 2001Google Scholar
3Fiederle, M., Fauler, A., Babentsov, V., Konrath, J.P.Franc, J.: Growth of high resistivity CdTe and (Cd,Zn)Te crystals, Proc. SPIE,5198, 48 2004CrossRefGoogle Scholar
4Fochuk, P., Panchuk, O., Feychuk, P., Shcherbak, L., Savitskyi, A., Parfenyuk, O., Ilashchuk, M., Hage-Ali, M.Siffert, P.: Indium dopant behaviour in CdTe single crystals. Nucl. Instrum. Methods Phys. Res., Sect. A 458(1–2), 104 2001CrossRefGoogle Scholar
5Stadler, W., Hofmann, D.M., Alt, H.C., Muschik, T., Meyer, B.K., Weigel, E., Muller, G., Salk, M., Rupp, E.Benz, K.W.: Optical investigations of defects in Cd1−xZnxTe. Phys. Rev. B 51(16), 10619 1995CrossRefGoogle ScholarPubMed
6Suzuki, K., Seto, S., Sawada, T., Imai, K., Adachi, M.Inabe, K.: Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method. J. Electron. Mater. 30(6), 603 2001CrossRefGoogle Scholar
7Li, Q., Jie, W., Fu, L., Yang, G., Zha, G., Wang, T.Zeng, D.: Photoluminescence analysis on the indium doped Cd0.9Zn0.1Te crystal. J. Appl. Phys. 100(1), 013518 2006CrossRefGoogle Scholar
8Dean, P.J.: Photoluminescence as a diagnostic of semiconductors. Prog. Cryst. Growth Char. 5, 89 1982CrossRefGoogle Scholar
9Leroux, M., Grandjean, N., Beaumont, B., Nataf, G., Semond, F., Massies, J.Gibart, P.: Temperature quenching of photoluminescence intensities in undoped and doped GaN. J. Appl. Phys. 86(7), 3721 1999CrossRefGoogle Scholar
10Halstead, R.E.Aven, M.: Photoluminescence of defect-exciton complexes in II-VI compounds. Phys. Rev. Lett. 14(3), 64 1965CrossRefGoogle Scholar
11Bimberg, D., Sondergeld, M.Grobe, E.: Thermal dissociation of excitons bounds to neutral acceptors in high-purity GaAs. Phys. Rev. B 4(10), 3451 1971CrossRefGoogle Scholar
12Yu, P.Y.Cardona, M.: Fundamentals of Semiconductor Springer Berlin 2001 60Google Scholar
13Worschech, L., Ossau, W.Landwehr, W.: Characterization of a strain-inducing defect in CdTe by magnetoluminescence spectroscopy. Phys. Rev. B 52(19), 13965 1995CrossRefGoogle ScholarPubMed
14Seto, S., Suzuki, K., Abastillas, V.N.Inabe, K.: Compensating related defects in In-doped bulk CdTe. J. Cryst. Growth 214, 974 2000Google Scholar