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Wear property and structure of nitrogen implanted glassy carbon

Published online by Cambridge University Press:  31 January 2011

M. Iwaki ,
K. Takahashi  and
A. Sekiguchi
M. Iwaki
Affiliation:
RIKEN (The Institute of Physical and Chemical Research), Hirosawa 2-1, Wako-shi, Saitama-ken 351-01, Japan
K. Takahashi
Affiliation:
RIKEN (The Institute of Physical and Chemical Research), Hirosawa 2-1, Wako-shi, Saitama-ken 351-01, Japan
A. Sekiguchi
Affiliation:
Science University of Tokyo, Yamazaki 2641, Noda-shi, Chiba-ken 278, Japan
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Abstract

A study has been made of the correlation between wear resistance and crystalline structure of ion implanted glassy carbon. Nitrogen ions were implanted in glassy carbon with fluences ranging from 5 × 1014 to 5 × 1016 ions/cm2 at an energy of 150 keV. The target temperature during ion implantation was maintained constantly at −70, 25, and 200 °C. Wear tests were carried out with the system of glassy carbon and polishing silk disk on which water including diamond slurry was poured, using a conventional polishing machine. The surface layer structure was investigated by means of laser Raman spectroscopy. Nitrogen implantation causes the wear resistance to improve, and the reduction of wear rate is dependent on the ion fluence and the target temperature during ion implantation. As the fluence increases and the target temperature is lower than room temperature, the wear rate decreases drastically. Raman spectra show that the structure of ion implanted layers becomes what is called amorphous-like as the fluence increases and the target temperature is lowered. In conclusion, the wear resistance of glassy carbon is improved owing to the change in structure followed by nitrogen implantation at a relatively high fluence and low target temperature.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2562 - 2566
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1Metastable Materials Formation by Ion Implantation, edited by Picraux, S.T. and Choyke, W. J. (North-Holland, New York, 1982).Google Scholar
2Iwaki, M., Nucl. Instrum. Methods B37/38, 661 (1989).Google Scholar
3Proc. of 6th Int. Conf. on Ion Beam Modification of Materials, Nucl. Instrum. Methods B39 (1989).Google Scholar
4Kalish, R., Bernstein, T., Shapiro, B., and Talmi, A., Radiat. Eff. 52, 153 (1980).Google Scholar
5Iwaki, M., Sato, S., Takahashi, K., and Sakairi, H., Nucl. Instrum. Methods 209/210, 1129 (1983).Google Scholar
6Sato, S., Iwaki, M., and Sakairi, H., Nucl. Instrum. Methods B19/20, 822 (1987).Google Scholar
7Sato, S. and Iwaki, M., Nucl. Instrum. Methods B 32, 145 (1988).CrossRefGoogle Scholar
8Takahashi, K., Yoshida, K., and Iwaki, M., Nucl. Instrum. Methods B7/8, 526 (1985).CrossRefGoogle Scholar
9Hartley, N. E.W., p. 295 in Ref. 1.Google Scholar
10Kanazawa, K., Chijiiwa, K., and Iwaki, M., Bull. Jpn. Soc. of Prec. Engg. 21, 63 (1987).Google Scholar
11Kenny, M. J., Pollock, J.T.A., and Wielunski, L.S., p. 704 in Ref. 3.Google Scholar
12Yoshida, K., Takahashi, K., Okuno, K., Katagiri, G., Iwaki, M., and Ishitani, A., Appl. Phys. Lett. 52, 1046 (1988).CrossRefGoogle Scholar
13Iwaki, M., Takahashi, K., Yoshida, K., and Okabe, Y., p. 700 in Ref. 3.Google Scholar
14Iwaki, M., Mater. Sei. Eng. A 115, 369 (1989).Google Scholar
15Elman, B. S., Dresselhaus, M. S., Dresselhaus, G., Maby, E.W., and Mazurek, H., Phys. Rev. B 24, 1027 (1981).Google Scholar
16Yoshida, K. and Iwaki, M., Nucl. Instrum. Methods B19/20, 878 (1987).Google Scholar
17Tsang, J.S., Demuth, J.E., Sanda, P.N., and Kirtley, J.R., Chem. Phys. Lett. 76, 54 (1980).Google Scholar
18Sato, S., Watanabe, H., Takahashi, K., and Iwaki, M., Proc, 2nd Japan-Sino Symp. on Ion Surface Optimization of Materials (IONICS Pub., Tokyo, 1989), p. 139.Google Scholar