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X-ray photoelectron spectroscopy of Cu–In–Se–N and Cu–In–Se thin films

Published online by Cambridge University Press:  31 January 2011

Shigemi Kohiki ,
Mikihiko Nishitani ,
Takayuki Negami  and
Takahiro Wada
Shigemi Kohiki
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Mikihiko Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Takayuki Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
Takahiro Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co. Ltd., Moriguchi, Osaka 570, Japan
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Abstract

The Cu, In, and Se core-level electron binding energies of the p-type Cu–In–Se–N thin film were larger than those of the n-type Cu–In–Se thin film. The positive shift of the core-electron binding energies for the Cu–In–Se–N film is consistent with that expected from the conduction types of the films. Holes were positioned in the Cu–Se antibonding orbitals of the Cu–In–Se–N film. The analysis using the Auger parameter revealed that the Cu–Se bonding interaction is stronger for the Cu–In–Se–N film than for the Cu–In–Se film.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 7 , Issue 8 , August 1992 , pp. 1984 - 1986
Copyright
Copyright © Materials Research Society 1992

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