Skip to main content
×
×
Home

Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS

  • Joshua Taillon (a1), Karen Gaskell (a2), Gang Liu (a3), Leonard Feldman (a3), Sarit Dahr (a4), Tsvetanka Zheleva (a5), Aivars Lelis (a5) and Lourdes Salamanca-Riba (a1)...
    • Send article to Kindle

      To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

      Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

      Find out more about the Kindle Personal Document Service.

      Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS
      Available formats
      ×
      Send article to Dropbox

      To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

      Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS
      Available formats
      ×
      Send article to Google Drive

      To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

      Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS
      Available formats
      ×
Abstract
Copyright
References
Hide All
[1] Cooper, J, et al, IEEE Trans. Electron Devices 49 (2002), p. 658.
[2] Jamet, P, Dimitrijev, S & Tanner, P, J. Appl. Phys. 90 (2001), p. 5058.
[3] Taillon, JA, et al, J. Appl. Phys. 113 (2013), p. 044517.
[4] Fenner, DB, Biegelsen, DK & Bringans, RD, J. Appl. Phys. 66 (1989), p. 419.
[5] Liu, G, et al, IEEE Electron Device Lett. 34 (2013), p. 181.
[6] Senzaki, J, et al, IEEE Electron Device Lett. 23 (2002), p. 13.
[7] Dhar, S, et al, J. American Chemical Societty. 131 (2009), p. 16808.
[8] The authors gratefully acknowledge funding from ARL contracts W911NF-11-2-0044 and W911NF-07-2-0046. JAT additionally acknowledges funding through the NSF GRFP, grant DGE 1322106..
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

Microscopy and Microanalysis
  • ISSN: 1431-9276
  • EISSN: 1435-8115
  • URL: /core/journals/microscopy-and-microanalysis
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed