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Compositional Analysis with Atomic Column Spatial Resolution by 5th-Order Aberration-Corrected Scanning Transmission Electron Microscopy

  • David Hernández-Maldonado (a1), Miriam Herrera (a1), Pablo Alonso-González (a2), Yolanda González (a2), Luisa González (a2), Jaume Gazquez (a3), María Varela (a3), Stephen J. Pennycook (a3), María de la Paz Guerrero-Lebrero (a4), Joaquín Pizarro (a4), Pedro L. Galindo (a4) and Sergio I. Molina (a1)...
Abstract
Abstract

We show in this article that it is possible to obtain elemental compositional maps and profiles with atomic-column resolution across an InxGa1−xAs multilayer structure from 5th-order aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images. The compositional profiles obtained from the analysis of HAADF-STEM images describe accurately the distribution of In in the studied multilayer in good agreement with Muraki's segregation model [Muraki, K., Fukatsu, S., Shiraki, Y. & Ito, R. (1992). Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantums wells. Appl Phys Lett61, 557–559].

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Corresponding author. E-mail: david.hernandez@uca.es
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Microscopy and Microanalysis
  • ISSN: 1431-9276
  • EISSN: 1435-8115
  • URL: /core/journals/microscopy-and-microanalysis
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