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HAADF STEM and PL Characterization of Monolayer-Thick GaN/(Al,Ga)N Quantum Wells for Deep UV Optoelectronics Applications
Published online by Cambridge University Press: 04 August 2017
Abstract
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- Microscopy and Microanalysis , Volume 23 , Supplement S1: Proceedings of Microscopy & Microanalysis 2017 , July 2017 , pp. 1488 - 1489
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- © Microscopy Society of America 2017
References
[4] The authors would like to acknowledge the supported by the Government of the Russian Federation (Project # 14.W03.31.0011) and use of NDIIF electron microscopy facilities at University of Notre Dame..Google Scholar
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