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Methodology to Improve Strain Measurement in III-V Semiconductors Materials

Published online by Cambridge University Press:  04 August 2017

Maryam Vatanparast
Affiliation:
Department of Physics, Norwegian University of Science and Technology - NTNU, Trondheim, Norway
Per Erik Vullum
Affiliation:
Department of Physics, Norwegian University of Science and Technology - NTNU, Trondheim, Norway SINTEF Materials and Chemistry, Trondheim, Norway
Turid W. Reenaas
Affiliation:
Department of Physics, Norwegian University of Science and Technology - NTNU, Trondheim, Norway
Randi Holmestad
Affiliation:
Department of Physics, Norwegian University of Science and Technology - NTNU, Trondheim, Norway
Magnus Nord
Affiliation:
SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow, United Kingdom
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Abstract

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Copyright
© Microscopy Society of America 2017 

References

[1] Hytch, MJ, Snoeck, E & Kilaas, R Ultramicroscopy 74 1998). p. 131.CrossRefGoogle Scholar
[2] Peters, JJP, et al, Ultramicroscopy 157 2015). p. 91.CrossRefGoogle Scholar
[3] Shockley, W & Queisser, HJ Journal of Applied Physics 32 1961). p. 510.CrossRefGoogle Scholar
[4] Jones, L & Yang, H Advanced Structural and Chemical Imaging 1 2015). p. 1.CrossRefGoogle Scholar
[5] The Norwegian Research Council is acknowledged for funding the HighQ-IB project under contract no. 10415201. The (S)TEM work was carried out on the NORTEM infrastructure at the TEM Gemini Centre, NTNU, Norway..Google Scholar
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