Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

A major issue in low voltage lithography is surface charging, which results in beam deflection presented as uneven exposure between adjacent structures. In this study, charge-induced pattern distortions in low-voltage energy beam lithography (LVEBL) were investigated using a silicide direct-write electron beam lithography process. Two methodologies have been proposed to avert charging effects in LVEBL, namely, pattern randomizing and lithography using the crossover voltage. Experimental results demonstrated that these methods are effective in significantly reducing the problems associated with charging. They indicate that charging on a sample is a function of time interval and proximity between line structures. In addition, the optimum time and distance between exposures for no charge-induced pattern distortion were determined. By using the crossover voltage of the material for lithography, charging effect can be significantly minimized.

We propose the formation of LEED patterns using a highly convergent beam forming a probe of nanometer dimensions. A reflection rocking curve may then be recorded in many diffraction orders simultaneously. Multiple scattering calculations show that the intensity variations within these rocking curves is as sensitive to the parameters describing the surface dipole layer as conventional I/V scans. However the data may be collected from areas sufficiently small to avoid defects and surface steps, radiation damage controlled by use of low voltages, and the information depth selected by choice of the (constant) voltage. We briefly discuss also the application of this method to oxides and the formation of atomic-resolution scanning images in an idealized instrument in which coherent diffracted LEED orders overlap.

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About 1 monolayer of palladium was deposited onto a silicon (111) 7 × 7 surface at a temperature of about 550 K inside an ultrahigh vacuum transmission electron microscope, resulting in formation of Pd2Si nanoislands and a 1 × 1 surface layer. Pd clusters created from an excess of Pd atoms on the 1 × 1 surface layer were directly observed by in situ plan view high-resolution transmission electron microscopy. When an objective aperture was introduced so that electron diffractions less than 0.20 nm were filtered out, the lattice structure of the 1 × 1 surface with 0.33 nm spacing and the Pd clusters with a trimer shape were visualized. It was found that image contrast of the 1 × 1 lattice on the specific height terraces disappeared, and thereby an atomic structure of the Pd clusters was clearly observed. The appearance and disappearance of the 1 × 1 lattice was explained by the effect of the kinematical diffraction. It was identified that a Pd cluster was composed of three Pd atoms without a centered Si atom, which is consistent with the model proposed previously. The feature of the Pd clusters stuck at the surface step was also described.

Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

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Following is a list of microscopy-related meetings and courses. The editors would greatly appreciate input to this list via the electronic submission form found in the MSA World-Wide Web page at http://www.msa.microscopy.com. We will gladly add hypertext links to the notice on the web and insert a listing of the meeting in the next issue of the Journal. Send comments and questions to JoAn Hudson, hudson@uoneuro.uoregon.edu or Nestor Zaluzec, zaluzec@aaem.amc.anl.gov.

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Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

InxGa1−xAs quantum dots in GaP(100) crystals prepared by the OMVPE technique are observed along the [011] direction with a newly developed 200-kV spherical aberration(Cs)-corrected HRTEM, a 200-kV annular dark-field (ADF)-STEM, and a 200-kV conventional HRTEM equipped with a thermal field-emission gun. The dots are 6–10 nm in size and strongly strained due to the misfit of about 9% with the GaP substrate and GaP cap layer. All of the cross-sectional high-resolution electron micrographs show dumbbell images of Ga and P atomic columns separated by 0.136 nm in well-oriented and perfect GaP areas, but the interpretable images are limited to those taken with the Cs-corrected HRTEM and ADF-STEM with Fourier filtering of the images. The Cs-corrected HRTEM and ADF-STEM are comparable from the viewpoint of interpretable resolution. A detailed comparison between the Cs-corrected HRTEM images and the simulated ones with electron incidence tilted by 1° to 5° from the [011] zone axis gives information on local lattice bending in the dots from the images around 0.1 nm resolution. This becomes one of the useful techniques newly available from electron microscopy with sub-Ångstrom resolution.

Sara E. Miller, President, Microscopy Society of America

Paul Carpenter, President, Microbeam Analysis Society

Allan Lockley, President, International Metallographic Society

Magnetic structures of Co/Cu multilayers in cross section are observed by two kinds of electron holography: a Fourier method and a phase-shifting method, which is introduced briefly. The Fourier method can easily reconstruct wave functions and is applied to many specimens, whereas the phase-shifting method requires longer time for processing, but has a higher spatial resolution that permits us to discuss fine structures. Magnetization vectors in Co layers aligning parallel and separating into two blocks with antiparallel alignment are observed. Magnetic blurring on the boundary between Co and Cu in the reconstructed phase images is larger than the estimated atomic roughness.

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Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

It is shown that the ultimate resolution is not limited by the bandwidth of the microscope but by the bandwidth (i.e., the scattering power) of the object. In the case of a crystal oriented along a zone axis, the scattering is enhanced by the channeling of the electrons. However, if the object is aperiodic along the beam direction, the bandwidth is much more reduced. A particular challenge are the amorphous objects. For amorphous materials, the natural bandwidth is that of the single atom and of the order of 1 Å−1, which can be reached with the present generation of medium voltage microscopes without aberration correctors. A clear distinction is made between resolving a structure and refining, that is, between resolution and precision. In the case of an amorphous structure, the natural bandwidth also puts a limit on the number of atom coordinates that can be refined quantitatively. As a consequence, amorphous structures cannot be determined from one projection, but only by using atomic resolution tomography. Finally a theory of experiment design is presented that can be used to predict the optimal experimental setting or the best instrumental improvement. Using this approach it is suggested that the study of amorphous objects should be done at low accelerating voltage with correction of both spherical and chromatic aberration.