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InAs-QDIP hybrid broadband infrared photodetector

  • Chee H. Tan (a1), Ian C. Sandall (a1), Xinxin Zhou (a1) and Sanjay Krishna (a2)
Abstract
ABSTRACT

We demonstrated that an InAs photodiode and a Quantum Dot Infrared Photodiode can be bonded to produce a hybrid broadband infrared photodetector. When cooled to 77 K the InAs photodiode can be used to detect wavelengths from visible to a cutoff wavelength of 3 μm while the Quantum Dot Infrared Photodiode detects wavelengths from 3 to 12 μm. The dark current and spectral response were measured on reference devices and bonded devices. Both sets of devices show similar dark current and spectral response, suggesting that no significant degradation of the devices after the bonding process.

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Corresponding author
*(Email: c.h.tan-mrsspring2016@scholarone.com)
References
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1. Krishna S., “Quantum dots-in-a-well infrared photodetectors”, J. Phys. D: Appl. Phys. 38 21422150, (2005).
2. Vines P., Tan C. H., David J. P. R., Attaluri R. S., Vandervelde T. E., Krishna S., Jang W. Y., Hayat M. M., “Versatile Spectral Imaging with an Algorithm-Based Spectrometer Using Highly Tuneable Quantum Dot Infrared Photodetectors”, IEEE J. Quantum. Electron, 47, 190197 (2011).
3. Jang W.-Y., Hayat M.M., Tyo J.S., Attaluri R.S., Vandervelde T.E., Sharma Y.D., Shenoi R., Stintz A., Cantwell E.R., Bender S.C., Lee S.J., Noh S.K., Krishna S.. “Demonstration of bias-controlled algorithmic tuning of quantum dots in a well (DWELL) midIR detectors,” IEEE J. Quantum Electron., 45, 674683, (2009).
4. Ker P. J., Marshall A. R. J., Krysa A. B., David J. P. R., & Tan C. H.., “Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes.” Optics Express, 20(28), 2956829576, (2012).
5. Marshall A. R., Ker P. J., Krysa A., David J. P., & Tan C. H. ,“High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit.” Opt Express, 19(23), 2334123349, (2011).
6. Dimroth F., et al. “Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency”, Progress in Photovoltaics: Research and Applications, 22, 277, (2014)
7. Justice J., Bowe C., Meitl M., Mooney M.B., Gubbins M.A. and Corbett B., “Wafer-scale integration of group III–V lasers on silicon using transfer printing of epitaxial layers”, Nature Photonics, 6, 610 (2012)
9. Marshall A. R. J., Tan C. H., Steer M. J., & David J. P. R, “Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes,” Applied Physics Letters, 93, 111107 (2008).
10. Hong G., Holmes A. S., Heaton M.E., “SU8 resist plasma etching and its optimization”, Microsystem Technologies 10, 357359 (2004).
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MRS Advances
  • ISSN: -
  • EISSN: 2059-8521
  • URL: /core/journals/mrs-advances
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