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Intrinsically stretchable field-effect transistors
Published online by Cambridge University Press: 02 February 2017
Abstract
A thin-film field-effect transistor (TFT) is a three-terminal device comprising source, drain, and gate electrodes, a dielectric layer, a semiconductor layer, and a substrate. The TFT is a fundamental building component in a variety of electronic devices. Developing an intrinsically stretchable TFT entails availability and usage of a functional material with elastomeric deformability in response to an externally applied stress. This represents a major materials challenge. In this article, we survey strategies to synthesize these elastomeric functional materials, and how these materials are assembled to fabricate intrinsically stretchable TFT devices. Developing solution-based printing technology to assemble intrinsically stretchable TFTs is considered a prospective strategy for wearable electronics for industrial adaptation in the near future.
- Type
- Research Article
- Information
- MRS Bulletin , Volume 42 , Issue 2: Stretchable and Ultraflexible Organic Electronics , February 2017 , pp. 131 - 137
- Copyright
- Copyright © Materials Research Society 2017
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