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Dielectric Properties of Pulsed Excimer Laser Ablated BaBi2Nb2O9 Thin Films

Published online by Cambridge University Press:  11 February 2011

Apurba Laha
Materials Research Center, Indian Institute of Science, Bangalore 560 012, INDIA
S. B. Krupanidhi
Materials Research Center, Indian Institute of Science, Bangalore 560 012, INDIA
S. Saha
Materials Science Divisions, Argonne National Laboratory, 9700, S. Cass Avenue, Argonne, IL-60439, USA
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The dielectric response of BaBi2Nb2O9 (BBN) thin films has been studied as a function of frequency over a wide range of temperatures. Both dielectric constant and loss tangent of BBN thin films showed a ‘power law’ dependence with frequency, which was analyzed using the Jonscher's universal dielectric response model. Theoretical fits were utilized to compare the experimental results and also to estimate the value of temperature dependence parameters such as n(T) and a(T) used in the Jonscher's model. The room temperature dielectric constant (ε') of the BBN thin films was 214 with a loss tangent (tanδ) of 0.04 at a frequency of 100 kHz. The films exhibited the second order dielectric phase transition from ferroelectric to paraelectric state at a temperature of 220 °C. The nature of phase transition was confirmed from the temperature dependence of dielectric constant and sponteneous polarization,respectively. The calculated Currie constant for BBN thin films was 4 × 105°C.

Research Article
Copyright © Materials Research Society 2003

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