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Low Pressure OMVPE Grown Compressive Strained Ingaas QWS Surrounded by Tensile Strained Ingaas Spacers

Published online by Cambridge University Press:  10 February 2011

O. A. Laboutine ,
A. G. Choo ,
S. H. Kim ,
N. H. Kim ,
H. S. Park ,
Y. J. Park  and
T. I. Kim
O. A. Laboutine
Affiliation:
Photonics Lab., Materials Sector, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, South Korea 440–600
A. G. Choo
Affiliation:
Photonics Lab., Materials Sector, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, South Korea 440–600
S. H. Kim
Affiliation:
Photonics Lab., Materials Sector, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, South Korea 440–600
N. H. Kim
Affiliation:
Photonics Lab., Materials Sector, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, South Korea 440–600
H. S. Park
Affiliation:
Photonics Lab., Materials Sector, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, South Korea 440–600
Y. J. Park
Affiliation:
Photonics Lab., Materials Sector, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, South Korea 440–600
T. I. Kim
Affiliation:
Photonics Lab., Materials Sector, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, South Korea 440–600
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Abstract

The photoluminescence (PL) measurement of unstrained and compressive strained InxGa1−xAs quantum wells (QWs) demonstrated that the interfaces had a roughness of 1 to 2.5 monolayers (ML). The spacer layers of tensile strained InyGa1−yAs were inserted between a compressive strained In0.7Ga0.3As QW and the InP barrier layers. PL spectra of the In0.7Ga0.3As/InyGa1−yAs/InP structures grown at 605°C became significantly narrower with increasing Ga content in the spacer layers above (1−y)=0.6. The PL line width of the In0.7Ga0.3As/In0.3Ga0.7As alternatingly strained multiple quantum well (MQW) structures gradually decreased when the number of periods and the deposition temperature increased. The structure, consisting of 4 periods grown at 635°C, exhibited a PL line width of about 4 meV which corresponded to the QW thickness fluctuation of 0.5 ML. The superlattice satellites of X-ray rocking curves of MQW structures were better defined under an envelope corresponding to the tensile strained layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 113
Copyright
Copyright © Materials Research Society 1997

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