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Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb and AlGaAsSb

Published online by Cambridge University Press:  21 February 2011

P.S. Dutta
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
H.L. Bhat
Affiliation:
Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
Vikram Kumar
Affiliation:
Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
E. Dieguez
Affiliation:
Departamento de Fisica de Materiales, Universidad Autonoma, Madrid-28049, Spain
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Abstract

The nucleation morphologies of LPE grown GaSb, AlGaSb and AlGaAsSb layers on GaSb substrates are presented. The morphology of the GaSb layers grown from Sb-rich melts showed facets on highly terraced surface, whereas those grown from Ga-rich melts exhibited fine terraces without facets. An optimum temperature in the range of 500 – 550°C was found to be suitable for the growth of mirror smooth layers from Ga-melts. The surface morphology of the AlxGa1-xSb layers degrades drastically with increase in Al content beyond x = 0.5. The surface morphology of AlGaAsSb epilayers has been found to depend strongly on the pre-growth melt dissolution sequence.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Milnes, A.G. and Polyakov, A.Y., Solid State Electronics 36, p. 803 (1993).Google Scholar
2 Kuphal, E., Appl.Phys.A 52, p.380 (1991).Google Scholar
3 Dutta, P.S., Sangunni, K.S., Bhat, H.L. and Kumar, Vikram, J. Crystal Growth 141, p. 44 (1994).Google Scholar
4 Dutta, P.S., Rao, K.S.R. Koteswara, Bhat, H.L., Naik, K. Gopalakrishna and Kumar, Vikram J. Crystal Growth 152, p. 14 (1995).Google Scholar
5 Lazzari, J.L., Leclercq, J.L., Grunberg, P., Joullie, A., Lambert, B., Barbusse, D. and Fourcade, R., J. Crystal Growth 123, p. 465 (1992).Google Scholar
6 Hall, R.N., J. Electrochem. Soc. 110, p. 385 (1963).Google Scholar
7 Motosugi, G. and Kagawa, T., J. Crystal Growth 49, p. 102 (1980).Google Scholar
8 Saul, R.H. and Roccasecca, D.D., J. Appl. Phys. 44, p. 1983 (1973).Google Scholar
9 Small, M.B. and Crossley, I., J. Crystal Growth 27, p. 35 (1974).Google Scholar
10 Mattes, B.L. and Route, R.K., J. Crystal Growth 27, p. 133 (1974).Google Scholar
11 Bauser, E., Frick, M., Loechner, K.S., Schmidt, L. and Ulrich, R., J. Crystal Growth 27, p. 148 (1974).Google Scholar
12 Woelk, C. and Benz, K.W., J. Crystal Growth 27, p 177 (1974).Google Scholar
13 Small, M.B., Blum, J.M. and Potemski, R.M., Inst, Phys. Conf. Ser. No, 33a, p. 9 (1977).Google Scholar
14 Law, H.D., Chin, R., Nakano, K. and Milano, R.A., IEEE J. Quantum Electron. QE–17, p. 275 (1981).Google Scholar