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Morphological Evolution and Properties of LPE Grown GaSb, AlGaSb and AlGaAsSb

Published online by Cambridge University Press:  21 February 2011

P.S. Dutta
Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
H.L. Bhat
Department of Physics, Indian Institute of Science, Bangalore - 560 012, India
Vikram Kumar
Solid State Physics Laboratory, Lucknow Road, Delhi - 110 054, India
E. Dieguez
Departamento de Fisica de Materiales, Universidad Autonoma, Madrid-28049, Spain
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The nucleation morphologies of LPE grown GaSb, AlGaSb and AlGaAsSb layers on GaSb substrates are presented. The morphology of the GaSb layers grown from Sb-rich melts showed facets on highly terraced surface, whereas those grown from Ga-rich melts exhibited fine terraces without facets. An optimum temperature in the range of 500 – 550°C was found to be suitable for the growth of mirror smooth layers from Ga-melts. The surface morphology of the AlxGa1-xSb layers degrades drastically with increase in Al content beyond x = 0.5. The surface morphology of AlGaAsSb epilayers has been found to depend strongly on the pre-growth melt dissolution sequence.

Research Article
Copyright © Materials Research Society 1996

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